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onsemi NGTG15N60S1EG IGBT NPT 600V 30A TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTG15N60S1EG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	NGTG15N60S1EG	Bulk			1	1 $3.96 10 $3.96 100 $3.96 1000 $3.96 10000 $3.96	Get Quote
Vyrian	NGTG15N60S1EG		993			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHG15N60E-GE3 MOSFET N-CH 600V 15A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG15N60E-GE3	Tube			1	1 $4.33 10 $2.84 100 $2.13 1000 $1.59 10000 $1.54	Buy Now
Vishay Intertechnologies SIHG15N60E-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHG15N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHG15N60E-GE3	Reel		22 Weeks	500	1 - 10 - 100 - 1000 $1.53 10000 $1.42	Buy Now
Mouser Electronics	SIHG15N60E-GE3		1,049			1 $4.42 10 $2.90 100 $2.17 1000 $1.66 10000 $1.53	Buy Now
TTI	SIHG15N60E-GE3	Tube			500	1 - 10 - 100 - 1000 $1.57 10000 $1.48	Buy Now
TME	SIHG15N60E-GE3		191		1	1 $4.04 10 $3.64 100 $2.89 1000 $2.69 10000 $2.69	Buy Now
EBV Elektronik	SIHG15N60E-GE3			23 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies IRFP26N60LPBF MOSFETs TO247 600V 26A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IRFP26N60LPBF	Tube	400		25	1 - 10 - 100 $4.53 1000 $4.53 10000 $4.53	Buy Now
Walsin Technology Corporation MG15N680J500CT Capacitor: ceramic; MLCC; 68pF; 50V; C0G (NP0); ±5%; SMD; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MG15N680J500CT				100	1 - 10 - 100 $0.01 1000 $0.00 10000 $0.00	Get Quote

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G15N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB15N60 P-TO-263-3-2 G15N60 PG-TO-263-3-2 G15N60 G15N60 IGBT PG-TO-263-3-2 PG-TO263-3-2 SGB15N60	PDF
G15N60 Abstract: PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB15N60 PG-TO-263-3-2 G15N60 G15N60 PG-TO-263-3-2 PG-TO263-3-2 SGB15N60 G15N60 IGBT	PDF
G15N60 Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP30N60 SGW30N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW30N60 G15N60	PDF
g15n60 Abstract: G15N60 IGBT SGP15N60 sgw15n60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 PG-TO-247-3-2 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3 G15N60 15ontain g15n60 G15N60 IGBT SGP15N60 sgw15n60 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 PG-TO-247-3-2	PDF
G15N60S1G Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G	PDF
G15N60 Abstract: PG-TO-247-3-21 SGP15N60 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60 PG-TO-247-3-21	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-247-3-21 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60 G15N60 IGBT PG-TO-247-3-21	PDF
G15N60 Abstract: Q67041-A4711 06mJ Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB15N60 SGB15N60 G15N60 Q67041-A4711 06mJ	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-247-3-21 Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW30N60 G15N60 G15N60 IGBT PG-TO-247-3-21	PDF
G15N60HS Abstract: G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535 Contextual Info: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SGB15N60HS P-TO-263-3-2 O-263AB) G15N60HS Q67040-S4ces. G15N60HS G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535	PDF
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 g15N6 NGTG15N60S1EG 22W8 Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 g15N6 22W8	PDF
G15N60HS Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2 Contextual Info: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60HS G15N60HS G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2	PDF
G15N60 Abstract: 06mJ Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP15N60 SGW15N60 PG-TO-220-3-1 O-220AB) PG-TO-247-3-1 O-247AC) SGW15N60 G15N60 06mJ	PDF

G15N60HS Abstract: G15N60H Contextual Info: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60ces. G15N60HS G15N60H	PDF
G15N60 Abstract: G15N60 IGBT PG-TO-247-3-21 PG-TO220-3-1 PG-TO-220-3-1 SGP30N60 SGW30N60 30A, 600v DIODE g15N6 Contextual Info: SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP30N60 SGW30N60 PG-TO-220-3-1 PG-TO-247-3-21 G15N60 PG-TO-220-3-1ain G15N60 G15N60 IGBT PG-TO-247-3-21 PG-TO220-3-1 PG-TO-220-3-1 SGP30N60 SGW30N60 30A, 600v DIODE g15N6	PDF
G15N60 Abstract: G15N60S1G NGTG15N60 NGTB15N60S1 Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 G15N60S1G NGTG15N60 NGTB15N60S1	PDF
G15N60 Contextual Info: SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP15N60 SGW15N60 PG-TO-220-3-1 PG-TO-247-3-21 SGW15N60 G15N60	PDF
Contextual Info: SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB15N60 P-TO-263-3-2 G15N60 PG-TO-263-3-2	PDF
G15N60S1G Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60S1G	PDF
G15N60 Abstract: NGTG15N60 G15N60S1G Contextual Info: G15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the	Original	NGTG15N60S1EG NGTG15N60S1E/D G15N60 NGTG15N60 G15N60S1G	PDF

G15N6 Search Results

G15N6 Price and Stock

onsemi NGTG15N60S1EG

Vishay Siliconix SIHG15N60E-GE3

Vishay Intertechnologies SIHG15N60E-GE3

Vishay Intertechnologies IRFP26N60LPBF

Walsin Technology Corporation MG15N680J500CT

G15N6 Datasheets Context Search

G15N60

G15N60

G15N60

g15n60

G15N60S1G

G15N60

G15N60

G15N60

G15N60

G15N60HS

MG30H1BL1

G15N60

G15N60HS

G15N60

G15N60HS

G15N60

G15N60

G15N60

G15N60S1G

G15N60