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    15N60S1G Search Results

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    Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original
    NGTB15N60S1EG NGTB15N60S1E/D PDF

    15N60S1G

    Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original
    NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G PDF

    Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original
    NGTB15N60S1EG NGTB15N60S1E/D PDF

    15N60

    Abstract: NGTB15N60S1EG
    Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the


    Original
    NGTB15N60S1EG NGTB15N60S1E/D 15N60 PDF

    NGTB15N60S1EG

    Abstract: 15N60S1G
    Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The


    Original
    NGTB15N60S1EG NGTB15N60S1E/D 15N60S1G PDF