BONDING Search Results

E85381

Contextual Info: RAYCHEM Tubing Products 1 CGAT Heat-shrinkable Tubing Adhesive-Lined, Flexible, Polyolefin Heat-Shrinkable Tubing Product Facts 3:1 Shrink ratio High-strength bonding • Moisture-proof ■ Environmental sealing ■ RoHS compliant ■ ■ Specifications/Approvals

w13002

Abstract: 03352 W1-300
Contextual Info: NM1-3216TWC4-01 Feature ◆ ◆ ◆ ◆ Viewing angle:140 deg The materials of the LED dice is InGaN/GaN 3.20mmx1.60mm×0.70mm SMT-LED RoHS compliant lead-free soldering compatible Package Outline RESIN: EPOXY BONDING WIRE:Φ25um Au LED DICE 1 2 PRINTED CIRCUIT BOARD: BT

Contextual Info: NM1-AYL1-01 Package outlines 2 RECOMMEND PAD LAYOUT 1 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES ITEM MATERIALS Resin Epoxy Bonding Wire Ø 25 µm Au Lens color Water transparent Dice AlGalnP Emitted color Yellow NOTES: 1. All dimensions are in millimeters inches ;

MPSa56 equivalent

Abstract: transistor MPSA56 MPSA56 transistor CP704 MPSA55 MPSA56
Contextual Info: PROCESS CP704 Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.7 X 3.7 MILS Emitter Bonding Pad Area 4.2 X 4.2 MILS Top Side Metalization

Schottky diode

Abstract: CMLSH05-4 diode 29 CPD96V
Contextual Info: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å

CP304

Abstract: MPSa06 equivalent transistor MPSA06 MPSA05 MPSA06
Contextual Info: PROCESS CP304 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.7 X 4.0 MILS Emitter Bonding Pad Area 5.3 X 4.0 MILS

MPSA13

Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

CPD73

Contextual Info: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)

transistor 2N4033

Abstract: 2N4033 CMPT4033 CP705 CXT4033 CZT4033
Contextual Info: PROCESS CP705 Small Signal Transistor PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization

1N4148 chip

Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

NJU6316 Series

Abstract: NJU6312AW-L NJU6312CC-L NJU6316XC-L CAPACITOR ceramic 15pf NS2009 NJU6316
Contextual Info: NJU6316 Series 0.9V Operation Fundamental Quartz Crystal Oscillator IC !GENERAL DESCRIPTION The NJU6316 series is C-MOS quartz crystal oscillator IC for fundamental up to 80MHz oscillation. The operating voltage is from 0.9V to 3.3V, and the pad layout is suitable for wire bonding mount of existing-sized

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization

1N5408 Diode 1N5408

Abstract: diode 1n5624 1N5408 equivalent 1n5408 Diode 1n5400 diode 1n5408 1n5400 diode 1n5624 1N5400 1n5408 diode
Contextual Info: PROCESS CPD06 General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 10.4 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization

UMD2-SOD-323

Abstract: ZENER DIODE 5.1V 10v ZENER DIODE Zener 5.1V UDZS Series Zener Diode SOD-323 ZENER diode BOOK 10v zener improves
Contextual Info: Diodes Zener diode UDZS Series FApplication Constant voltage control FExternal dimensions Units: mm FFeatures 1) Extremely compact, 2–pin mini–mold type for highdensity mounting. (UMD2–SOD–323) 2) Non–wire bonding structure improves antu–surge capability.

2N2222A npn transistor

Abstract: 2n2222a die CMPT2222A CZT2222A CXT2222A 2n2222a datasheet Transistor 2N2222A 2N2222A NPN transistor datasheets CP191 PN2222A
Contextual Info: Central TM PROCESS CP191 Small Signal Transistor Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS

1N4007 rectifier diode

Abstract: 1N4007 details 1n5062 equivalent free download datasheet 1N4007 1N5622 1N5614 1N5062 diode 1n5059 equivalent components of diode 1N4249 1N3611
Contextual Info: PROCESS CPD05 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization Au - 5,000Å Back Side Metalization

B59060-A60-A10

Abstract: B59060-A160-A10 ptc siemens B59060 B59060-A180-A10 B59060-A220-A10 B59060-A40-A10 B59060-A80-A10
Contextual Info: Heating Elements and Thermostats B59060 A 60 12 V Applications ● Heating element for small heating systems, e. g. in automobiles Features ● Thermistor disk with silver metallization on front surfaces Termination ● Suitable for clamp-contacting and glue-bonding

closure

Abstract: Lucent Technologies fiber LG36 2400-LG36 comcode
Contextual Info: fiber.book : sec11.fm Page 15 Thursday, June 22, 2000 11:40 AM 2400 Fiber Optic Bonding and Grounding Closure This closure is designed to provide lightning and power crossprotection for Lucent Technologies Fiber Optic cables at nonsplice points in aerial, buried, underground, vault, and customer premises

CD5279B

Abstract: CD5265B zener diode si 18 1n522ib CD5221B CD5222B CD5223B CD5224B CD5225B CD5226B
Contextual Info: jCOMPENSATED DEVICES INC . * M l R DIODE CHIPS' ;— EQE D I 2305554 DÖD041D 1 ' • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD5221B • ELECTRICALLY EQUIVALENT TO 1N522IB THRU 1N5281B thru . GENERAL PURPOSE 500 mW CHIPS CD528I1B • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

opto 421

Abstract: OD-24X24-C 3BFL 10010y
Contextual Info: OPTO DIODE CORP SSE D • b flQ in fi DDDD14S HEI M O P D V - V / ~ HIGH POWER GaAlAs IR EMITTER CHIPS OD-24X24-C FEATURES • High current capability • 2 bond pads for uniform output • Gold contacts for high reliability bonding • High reliability LPE GaAIAs IRLED chips

CD4490

Abstract: CD4464 CD4469 CD4460 CD4468 DIODE 33 25 CD4461 CD4462 CD4463 CD4465
Contextual Info: • 1.5 WATT ZENER DIODE CHIPS CD4460 thru • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACHED TECHNIQUES CD4490 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

ZENER DIODE 5.1V

Abstract: zener DIODE A1 zener a1 7 10 watt zener diode diode ZENER A1 CD6485 CD6486 CD6487 CD6490 CD6491
Contextual Info: • ZENER DIODE CHIPS CD6485 • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru • COMPATIBLE WITH ALL WIRE BONDING DIE ATTACH TECHNIQUES CD6491 • 1.5 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS Operating Temperature: Storage Temperature:

N5711* diode Die

Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
Contextual Info: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS