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CPD96V Datasheets (1)

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Central Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CPD96V		Central Semiconductor	Chip Form: SCHOTTKY DIODE 7 MIL	Original	PDF	69KB	1

CPD96V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Schottky diode Abstract: CMLSH05-4 diode 29 CPD96V Contextual Info: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å	Original	cpd96v 500ma cmlsh05-4 29-august +2schottky diode diode 29	PDF
Schottky diode Die Contextual Info: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18.5 x 18.5 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 12 x 12 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 12,000Å	Original	cpd96v 500ma schottky diode die	PDF
CPD96V Contextual Info: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å	Original	cpd96v 500ma	PDF
CMLSH05-4 Abstract: CPD96V Contextual Info: PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16.4 x 16.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å	Original	cpd96v 500ma cmlsh05-4 22-march	PDF
Schottky diode Die Contextual Info: PROCESS Central CPD96V Schottky Diode Semiconductor Corp. 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16 x 16 MILS Top Side Metalization Al - 20,000Å Back Side Metalization	Original	cpd96v 500ma cmlsh05-4 15-march +1schottky diode die	PDF
CP588V Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91 Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.	Original	cpd48 cpd76 cpd78 cpd80 +10cpd83 cpd88 cpd91 cpd92 cpd96 cp188 cp588v cp-392v cp307 cp191	PDF
BF244 datasheet Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910 Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216	Original	1n456 cpd64 1n456a 1n457 +121n457a 1n458 bf244 datasheet 2n5133 equivalent mps5771 bd345 bd347 bf244 2n5248 bf256 2n3304 2n5910	PDF
UJT 2n3904 Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45 Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24	Original	ujt 2n3904 transistor 2n4033 ujt 2n6027 2n4209 datasheet +6mj15003 equivalent transistor 2n5401 mj15004 2n4393 mj15003 mj15004 bav45	PDF