CPD76 Search Results

Schottky diode Die

Abstract: "Schottky Diode" diode diode 10A 1n5819 die DIODE 1N5819 datasheets diode 1n5818 datasheets diode 1n5819 1N5817 diode 1n5819 data sheet
Contextual Info: PROCESS CPD76V Schottky Diode 1.0A Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 26 x 26 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY

Contextual Info: PROCESS CPD76X Schottky Diode 1 Amp Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 32 x 32 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 27 x 27 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY

IC 7410

Abstract: IC 7410 datasheet marking code cj cp741 CP341 NPN PNP sot-563 sot 123f Schottky diodes tvs SMC MARKING marking code 45W CPD76V
Contextual Info: Tiny Leadless Module Guide Central Semiconductor Corp. TLM Tiny Leadless Modules TLM Schottky Rectifiers Selection Guide TYPE NO. VRRM IF VF @ IF V MAX (A) MAX (V) MAX (A) 40 1.0 0.55 1.0 CTLSH1-40 trr †TYP. (ns) MAX CD †TYP. (pF) MAX CHIP PROCESS

CP588V

Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

2N2645

Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Contextual Info: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.