CPD48 Search Results

DIODE 720

Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

CPD48V

Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

high current schottky diode

Abstract: Schottky Diode CPD48 Schottky diode wafer
Contextual Info: PROCESS CPD48 Central Schottky Diode TM Semiconductor Corp. High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

high current schottky diode

Abstract: CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

marking code s1

Abstract: "MARKING CODE S1"
Contextual Info: Central' CMDSH-3 Semiconductor Corp. SUPERmini SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky diode, manufactured in a SUPERmini™ surface mount package, designed for fast switching applications requir­ ing a low forward voltage drop.

Contextual Info: Central CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPSH-3 series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.

marking D3 SOT26

Contextual Info: Central" CMXSH-3 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three 3 Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar

0C171

Abstract: SCHOTTKY DIODE SOT-143
Contextual Info: Central" CMFSH-3Ï semiconductor Corp. DUAL ISOLATED SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i type is a Silicon Dual Isolated Schottky diode designed for surface mount fast switching appli­ cations requiring a low forward voltage drop.

CMLSH-4

Contextual Info: Central“ CMLSH-4 SURFACE MOUNT PICOmini DUAL, ISOLATED SILICON SCHOTTKY DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4 are two individual electrically isolated 40 volt Schottky Diodes, in a space saving SOT-563 surface mount

JH MARKING CODE SCHOTTKY DIODE

Abstract: MARKING 3D0 marking 6 marking code D23
Contextual Info: Central“ CMKSH-3DO Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL OPPOSING SILICON SCHOTTKY DIODES FEATURES: • DUAL OPPOSING DO SCHOTTKY DIODES • SPACE SAVINGS ULTRAmini™ FAMILY • GALVANICALLY ISOLATED • LOW FORWARD VOLTAGE (0.58V TYP @ 100mA)

sot-23 MARKING CODE SP

Abstract: Marking Code .25c sot23 DIODE Sp marking code marking code r1 sot23 Marking Code 25c sot23 MARKING CODE 190 device marking code A1 marking F1 SOT23 marking CM sot23 fr marking code sot23
Contextual Info: Central" CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an

ED marking code diode

Abstract: D95E
Contextual Info: Central“ CMPSH-3E CMPSH-3AE CMPSH-3CE CMPSH-3SE Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: SURFACE MOUNT SILICON SCHOTTKY DIODES The CENTRAL SEMICONDUCTOR CMPSH-3E Series types are Enhanced Versions of the CMPSH-3 Series of Silicon Schottky Diodes in an

Contextual Info: Centrar CMFSH-3Ì Semiconductor Corp. DUAL, ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is

Contextual Info: Central“ CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for­

Contextual Info: Central" CMHSH-3 Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHSH-3 type is a Silicon Schottky diode, epoxy molded in a SOD-123 surface mount package, designed for fast switching applications requiring a low for­

diode 824

Contextual Info: Central" CMOSH-3 semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring

CP588V

Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

marking sSH sot-23

Abstract: marking code 3c diode MARKING CODE SSH marking b1d
Contextual Info: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SUPERmini SILICON SCHOTTKY DIODES CMSSH-3: CMSSH-3A CMSSH-3C CMSSH-3S Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini™ surface mount pack­

2N2645

Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Contextual Info: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.

diode Marking Code 53

Contextual Info: Central" CMOSH-3 Semiconductor eorp. SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring

4E diode

Abstract: MARKING 4 SOD523 marking code 4e
Contextual Info: Central CM0SH-4E Semiconductor Corp. E N H A N C E D SPECIFICATIO N SCHOTTKY DIODE EN H AN CED UlIRAmini <E> DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package.