CMSD2004 Search Results

CMSD2004S

Contextual Info: Central CMSD2004S TM Semiconductor Corp. SUPERminiTM DUAL SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage

CMSD2004S

Contextual Info: Product specification KMSD2004S CMSD2004S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VR 240 V Peak repetitive reverse voltage VRRM 300 V Peak repetitive reverse current IO 200 mA Continuous forward current IF 225 mA Continuous reverse voltage

CMSD2004S

Abstract: A0 DIODE
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode CMSD2004S SOT-323 SWITCHING DIODE FEATURES 1. 25¡ À0. 05 mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 225 mA IF: Collector-base voltage 240 V VR: Operating and storage junction temperature range

CMSD2004S

Contextual Info: CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed

CMSD2004S

Abstract: diode SB 240 J-STD-020D
Contextual Info: CMSD2004S SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 240 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally Suited for Automatic Insertion • For general purpose switching applications SOT-23 Dim. A A1 b

CMSD2004S

Contextual Info: Central CMSD2004S Semiconductor Corp. SURFACE MOUNT SUPERmini DUAL, SILICON SWITCHING DIODES SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process,

CMSD2004

Abstract: Galaxy Semiconductor Diode SOT-23 marking J SOT-23-5 MARKING VF
Contextual Info: BL Galaxy Electrical Production specification Surface mount switching diode CMSD2004 FEATURES z Pb The central semiconductor cmsd2004 Lead-free stype is a silicon switching dual in series diode manufactured by the epitaxial planar, designed for applications requiring high voltage capability. power

CMSD2004S

Abstract: d2 diode series PD 275 diode marking r5
Contextual Info: Central CMSD2004S TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL, SILICON SWITCHING DIODES SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process,

CMSD2004S

Contextual Info: Central TM NE W CMSD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION SUPER mini The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

CMSD2004S

Contextual Info: CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed

CMSD2004S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 CMSD2004S Plastic-Encapsulate Diodes SOT-23 SWITCHING DIODE FEATURES CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. Power dissipation

diode SB 240

Abstract: CMSD2004S
Contextual Info: CMSD2004S SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 240 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally Suited for Automatic Insertion • For general purpose switching applications SOT-23 Dim. A A1 b

CMSD2004S

Contextual Info: CMSD2004S SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 240 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally Suited for Automatic Insertion • For general purpose switching applications SOT-23 Dim. A A1 b

Ir 233L

Abstract: CMSD2004S
Contextual Info: SOT-23-3L Plastic-Encapsulate Diodes CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage VR ：240 V Operating and storage junction temperature range

CMSD2004S

Contextual Info: Central" CMSD2004S Semiconductor Corp. SUPERmini DUAL SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage

CMSD2004S

Contextual Info: Diodes SMD Type High Voltage Switching Diode KMSD2004S CMSD2004S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VR 240 V Peak repetitive reverse voltage VRRM 300 V Peak repetitive reverse current IO 200 mA Continuous forward current IF 225

CMSD2004S

Abstract: high voltage diodes marking code C1
Contextual Info: Central CMSD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

Contextual Info: CMSD2004 Surface Mount Switching Diode SOT-23 Features — The central semiconductor cmsd2004 stype is a silicon switching dual in series diode manufactured by the epitaxial planar, designed for applications requiring high voltage capability. power dissipation.

CMSD2004S

Abstract: BAV99W
Contextual Info: CMSD2004S CMSD2004S ＳＯＴ－２３－３Ｌ SWITCHING DIODE FEATURES １．０２ Power dissipation PD ：250 mW（Tamb=25℃） Collector current IF ：225 mA Collector-base voltage VR ：240 V Operating and storage junction temperature range

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

CMSD2004S

Contextual Info: R C om t plian SURFACE MOUNT SWITCHING DIODE Maximum Peak Reverse Voltage TYPE Forward Maximum Average Peak Rectified Current Surge @Half-Wave Current Resistive Load Superimposed 60Hz Maximum Reverse Current @25OC TA Maximum Maximum Forward Reverse Voltage

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches