BFQ 96 Search Results

5252 F ic

Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Contextual Info: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65

philips bfq

Abstract: FQ236A 236A
Contextual Info: Philips Semiconductors Product specification NPN video transistors BFQ236; BFQ236A FEATURES DESCRIPTION • High breakdow n voltages NPN vid e o tra n sisto r in a SO T223 plastic package. PNP com plem ents: BFQ 256 and BFQ 256A. • Low output capacitance

Transistor C G 774 6-1

Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Contextual Info: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

temic 0675

Abstract: BFQ 540 application
Contextual Info: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.

temic 0675

Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Contextual Info: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23

k 1191

Abstract: Z0 607 MA GP 652 Q62702-F1189
Contextual Info: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ72

Abstract: Q62702-F776 s parameters transistor ac 151
Contextual Info: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

dm 0765

Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Contextual Info: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz

ZS 633

Abstract: ZS 1052 AC cerec BFQ645 617 300 MARKING 7C
Contextual Info: SIEM EN S NPN Silicon RF Transistor BFQ 645 Preliminary Data • For low-noise, high-gain amplifiers and medium power oscillators at collector currents up to 20 mA. • fr = 9 GHz F = 1 .9 d B a t2 G H z ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ28

Abstract: Q62702-F527 CJCO D 843 Transistor
Contextual Info: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

st ae gp 446

Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Contextual Info: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!

BFP29

Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Contextual Info: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

pin configuration BFW 11

Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
Contextual Info: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72

CJW SOT-23

Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89

S0642

Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89

3570 1301

Abstract: BFP92 BFQ22 BFQ63 1521e 2N918 BFT50 cl2o 2N3570 2N 1309
Contextual Info: 1 . 1000 MHz class A low noise for small signal applications classe A faible bruit petit signal TYPE È oc o Q. fT p t o t V B R C E O m in . PAC KAG E m ax. Im W ) (V ) (M H z ) THOMSON-CSF @ lc C l2« @ V c b Gp C22b* I m A ) (p F ) (V ) Gu m * «dB)