BF998R
Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer
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bf998bf998rmam039r77/02/pp15+4mga002mge802application bf998dual-gate
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer
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BF998
Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BB405 BF998R UGC469 marking code g1s
Contextual Info: Product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS
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bf998bf998rot143ot143r+97110fl5bmga002mge802bf998 mopdual-gatecfs 455 jbb405ugc469marking code g1s
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BF998
Abstract: MGA002 MGE802 BF998 depletion BF998R dual-gate bf-998 MGE812 bb405 MGE814
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs
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bf998bf998rmam039mga002+7mge802bf998 depletiondual-gatebf-998mge812bb405mge814
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g1 TRANSISTOR SMD MARKING CODE
Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs
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bf998bf998rmam039g1 transistor smd marking code+8marking code ff smd transistortransistor smd marking code bs tmarking code ff p smd transistorsmd marking mopnf marking transistor smd c4marking transistor smd nf c1marking transistor smd nf c4g1 7 transistor smd marking code
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Contextual Info: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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bbs3t31qq23b34bf998ot143+1ltis3t31
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MAM184
Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking
Contextual Info: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF998 FEATURES APPLICATIONS • Short channel transistor with high ratio I YfSl / Cis • VHF and UHF applications such as television tuners with 12 V supply voltage and professional
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ot143bf998mam184mosfet tetrode+3mosfet vhf power amplifiertetrode transistormop top marking
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BF908 Application Note
Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Contextual Info: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS
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rnr-t45-97-f-80512vtypesbf998bf908+15bf1100ot143bf998rbf908rbf1100rot143rbf908 application notebf1109dual-gatephilips rf mosfetsrgg20mosfets fl philipstransistor mosfet 9vbf909rjbt switch
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TRANSISTOR mosfet BF998
Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Contextual Info: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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bf998ot143mcb346mcb345+4transistor mosfet bf998bf998 depletionucb343dual gate mosfet
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bf998 Mop
Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor
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75beb6f998ot143bf998 mop+8bf998marking t54philips mosfet markingphilips mosfetmcb349dual gate fetn-channel dual-gate mos-fet for tvdual gate mos-fet
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M74 marking
Abstract: MARKING m3p marking code NB SOT23 m2p SOT23 m33 sot23 MARKING CODE m33 marking Code philips BSR58 marking M33 BF1109
Contextual Info: Philips Semiconductors Small-signal fteld-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE MARKING CODE TYPE NUMBER TYPE NUMBER MARKING CODE
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ot143ot343bf510bf511+16bf512bf513bf545abf545bbf545cbf556am74 markingmarking m3pmarking code nb sot23m2p sot23m33 sot23marking code m33marking code philipsbsr58marking m33bf1109
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sot23 marking M6p
Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER
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ot143ot343bf510bf994s+9bst120bf511bf996sbst122bf512bf997sot23 marking m6ppmbfj111pmbfj174
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Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
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ot143ot323ot343ot363+16od110od323od523bf992pmbf4416abf510philips marking codedatasheets for bb132 varicapmarking code w1bat18 a2psot143 marking code a5marking codessot143 marking code a3marking a5 sot363marking w1s13 sot363
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BSS83 M74
Abstract: bf992 m92 bf998 Mop marking M29 M74 marking BF511 BF909RM29 marking nb transistor M3P BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes Small-signal field-effect transistors 1997 Dec 05 Supersedes data of 1995 Apr 12 File under Discrete Semiconductors, SC07 Philips Semiconductors Small-signal field-effect transistors Marking codes Types in SOT23, SOT89, SOT143 and SOT343 packages are marked with a code as listed in the following table.
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ot143ot343bf510bf991+15pmbf4391bf511bf992pmbf4392bf512bf992rbss83 m74bf992 m92bf998 mopmarking m29m74 markingbf909rm29marking nbtransistor m3pbft46
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517bf770abf771+16bf775bf799bf799wbfp181bfp181rbfp182xm0830sjsmd code marking 162 sot23-5marking v14 sot23-5rf transistor selectionsmd code marking rf ft sot23smd code marking nec rf transistorsot-363 infsmd marking d3 sot363xm0860shmga51563
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517b132-h8248-g5-x-76002sc3052ef+92n2222a sot23transistor smd marking code s2a1n4148 smd ll-34transistor smd code package sot232n2222 sot23transistor s1a 64 smd1n4148 sod323semiconductor cross referencetoshiba smd marking code transistor
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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circuit diagram of gsm based home automation systembf1118mobile jammer gsm 1800 mhz circuit diagrambgu7051+6blf578cmmb antennamrf6v2300n300w power amplifier circuit diagrambf256b spice modelmaxim dvb
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sot-89 BV SMD TRANSISTOR MARKING CODE
Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ
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nxprf14jesd204aaec100rfbfr90+13rfbfq33tff1004hnfmf11070hnsot-89 bv smd transistor marking codebgu7051ms10512sk163blf578 fm bandblf278 mosfet hf applicationsbfu610ftan250aptfa 210301e - 30 w100mhz smd rf mixer
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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upc8236mrfe6vpm74 7 segment displaymounting and soldering of rf transistors+6mobile jammer gsm 1800 mhz circuit diagramblf4g08ls-160arf amplifier mhz doherty 470-860rf transceiver 802.11acan10882m74 7 segment display input
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filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率
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rf2010567sigejesd204a-dacadcjesd204a-+15aec100bfr90bfq33tff1004hnjesd204ablf578filter for gps spicediode smd marking buf gp 750blf7g10-300pax 2008 lqfp48gp 809 diodebf1118mpal2731m15bgu7051bb 505 varicap diode
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121mpf102 spice modelblf278 mosfet hf amplifierblf4g08ls-160a+7x-band mmic core chipblf4g08ls-160bit 3713ib3135toshiba smd marking code transistorbgu7041tea6848h
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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prf957tff1003hntff1007hntff1014hn+16tff1015hntff1017hntff11070hntff11073hntff11077hntff11080hnba 7891 ngbts 2140 1btff1014blf4g08ls-160abf1107 spice modelbf862 spice modelrf transceiver 802.11acmultiple output lnb802.11acbgu6104
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