BF 183 transistor
Abstract: BF183 BF 528 transistor bf 175 Y21b y12b Oscillator CQE pour Y22b transistor BF 450
Contextual Info: BF 183 NPN SILICO N TRA N SISTO R, E P IT A X IA L PLAN AR T R A N S IS T O R NPN S IL IC IU M , P L A N A R E P IT A X IA L The NPN planar epitaxial BF 183 i; intended for use in V H F oscillator stages of television recei vers and generally for all V H F-U H F uses.
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-c12ebf 183 transistorbf183bf 528+7transistor bf 175y21by12boscillator cqepoury22btransistor bf 450
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TRANSISTOR BC 213
Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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bcw94cb-76transistor bc 213transistor bc 181+8bf 239bf 212 transistortransistor bf 184bf 184 npn transistortransistor bc 212transistor bc 174transistor bc 338bf 184 transistor
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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BF 184 transistor
Abstract: BF457 bf459 IC 41 BF transistors 458
Contextual Info: BF 457 BF 458 SILICON P LA N A R NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec T O -1 26 plastic package. They are particularly intended fo r use as video o u tp u t stages in
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o-126i300vbf 184 transistorbf457+3bf459ic 41 bftransistors 458
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MPS6539
Abstract: BF224 BF369 bf 182 bf310
Contextual Info: RF-IF High Frequency Transistors M A X IM U M R A T IN G S TY PE NO. PO LA R IT Y CASE m W (raA ) VcEO vv CBO* (V ) Pd Ic H FE ^CE(sat) m in m ax Ic (m A ) ^CE (V ) fT C 0b r* * '-'re N .F . m ax (p F ) m ax (d B ) (V ) (m A ) m in (M H z ) 0.3 0.95
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bf155bf167bf180bf18i+10bf183bf200bf224bf240bf24ibf253mps6539bf369bf 182bf310
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tfk 186
Abstract: BF115 BF 183 transistor BF 182 transistor TFK S 186 BF 186 tfk 145 transistor bf 184 BF 184 NPN transistor BF 184 transistor
Contextual Info: V BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 2,54 *4,8 »5,7 «0,5 -:— f - — Í t •*- 13-►
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tfk 186bf115bf 183 transistorbf 182 transistor+6tfk s 186bf 186tfk 145transistor bf 184bf 184 npn transistorbf 184 transistor
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Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code
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q62702-f1316ot-23fl235l900mhz |
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Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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q62702-f1316ot-23bfr183900mhz |
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transistors BC 543
Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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ot-23ot-363ot-143transistors bc 543+9183wdiode baw 62bcr191psot23 bcv 27transistor bc 530sot-23 p1diode s6 78ammic amplifier sot-89 p4diode sot 143 s5
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S2126
Contextual Info: BFR 183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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vps05161ot-23oct-13-1999s2126 |
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Transistor BFR 14
Abstract: Q62702-F1316 SIEMENS marking
Contextual Info: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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ot-23q62702-f1316dec-11-1996transistor bfr 14+1siemens marking
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sot143 Marking code RHs
Abstract: Q62702-F1382
Contextual Info: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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ot-143q62702-f1382900mhzdec-13-1996+1sot143 marking code rhs
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VPS05178
Abstract: BFP183
Contextual Info: BFP 183 NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4 fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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vps05178ot-143900mhzoct-12-1999+1bfp183
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Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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q62702-f1382ot-143235bq5bfp183+1900mhz
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mosfet J 3305
Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Contextual Info: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,
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mtp7p06b3b72540chfl703mosfet j 3305+4221a-0672sman569tmos power fet
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BF494
Abstract: bf494 pin configuration BF 495c pin configuration bf494 TRANSISTOR equivalent bf494 equivalent TRANSISTOR BF495 transistors bf494 bf495 pin configuration high frequency transistor BF494 transistor bf494
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic Package High Voltage Video Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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bf494bf495c-120bf494 pin configuration+8bf 495c pin configurationbf494 transistor equivalentbf494 equivalenttransistor bf495transistors bf494bf495 pin configurationhigh frequency transistor bf494transistor bf494
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bf494 pin configuration
Abstract: BF494 BF 495c pin configuration bf495 pin configuration transistors bf494 495d TRANSISTOR BF495 BF495 transistor BF494 BF495C
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic Package High Voltage Video Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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bf494bf495c-120bf494 pin configuration+7bf 495c pin configurationbf495 pin configurationtransistors bf494495dtransistor bf495transistor bf494bf495c
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BF 495c pin configuration
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic Package High Voltage Video Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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bf494bf495c-120bf 495c pin configuration |
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2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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o-92d2907a pnp bipolar transistorsbc 148 transistor datasheettransistor bc 450 pnp+7diode s6 78atransistors bf 517bfg sot89bc 327 sot 23bas20 sot23diode ta 70/04bcp 846
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diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
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o-92tlo-92ddiode s6 78atransistor pnp ba rt sot 89+8mmic cea sot36332n45transistor 6bwtransistor bc 545bf1012s6bw sot-23up 6103 s86bw 12 transistor
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BFW 10 fet
Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)
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0000fco-72jo-106o-72g+12to-02melf-002bfw 10 fettransistor bf 494bf 494 transistorbfw 10 a fettransistor bf 184transistor bf 253transistor bf 241bf 184 transistortransistor bf 495transistor bf 254
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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ot-23ot-89ot-143bzv49+112sc2059ksot-23 marking code zab0808bcb47bbcb17-16marking za sot892sb0151kmarking k5 sot89sot 86 marking e4n33 sot-2310y sot-23
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S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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25-rf-bipolar-transistors45-rf-bipolar-transistorsot-23ot-143+10s4 78a diode schottkydiode s6 78abc 148 transistor datasheettransistors bc 543transistor bc 158bc 158 is npn or pnp68w npntransistor bcs6 78abaw 92
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