Katalog CEMI
Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby
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katalog cemioa81 diodebyp 660-50rphilips bc147+6p 181 transoptormullard oa81hitachi 12v ms 5a-181oa81ba102 diodetelefunken hr 780 rds
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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q60103-ths10to3530to4600+10iao5 sharpfree transistor equivalent book 2scsiemens transistor asy 27diode bay 61transistor bj 131-6tesla typ 202 thyristorteslaz1072hall effect 21ez1071
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AFY16
Abstract: Germanium Transistor 71lb 21b22
Contextual Info: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.
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afy1618a4din41876q60106f-200+3germanium transistor71lb21b22
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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BF180
Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Contextual Info: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti
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bf180s21bbf180 transistors parametres+6s22bbf 180ce 470 10vj bf180max s21best 504
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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d-8154114-077sq62702-d1353q62702-g172+11q62702-g173ujt 2646transistor j 5804label infineon barcodemsc 1697msc 1697 ic pin diagramrohde und schwarz active antenna he 011cd 6283 audiosmd transistor v75log tx2 0909ic data book free download
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6transistor a2222equivalent of transistor bc212 bc 214bfw-11 terminalssescosem transistorequivalente transistor bc 141brochage bcw91
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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X2081
Contextual Info: Rectipoint Silicon Power Rectifiers £ Dia. AC F Dla. - F 0io.(+) ri D im e n sio n s X Type c L . Inches rx E Dio. AC F Oia.(—) - F DÎO-C+) TT L Y Type ,P T ^ ~ c A 8 C D E F G K L M N P Q Millimeters 109.4 4.31 .625 15.87 4.0 101.6 3.12 79.2 .201 5.10
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3/16x5/165/16-18un3/16x5/16-----y20-b1-1+7y21-b1-1y20-z1-1y21-z1-1x20-81-1x21-b1-134-b1-1x2081
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Y07B
Abstract: 55B0 Y02A
Contextual Info: .I : r ,E T CAP TAPE TUBE PLASTIC BOX 8 9 8 9 8 -Y 02 UP TO -Y 0 4 NO NO NO YES 898 9 8 -Y 0 5 UP TO -Y 5 0 NO NO YES NO YES YES NO NO YES YES NO NO YES NO YES NO OPTION LETTER ow e" I dW d " SEE TAQl E SHEET 2 /2 B9S98-YXXA 89898-Y05Y /-Y 0 7 Y 89898-YXXB
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b9s98-yxxa89898-y05y89898-yxxb89898-4x+989898-3xf9q144f9q606f8031f0oj33f806s7y07b55b0y02a
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mosfet p321
Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS
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an215a/dan215amosfet p321motorola an215a application+8y12tusing linvill techniquesan166 linvillh12c transistor makingdual-gate ybmotorola an215ay parameters of transistorsy11t
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SMD Transistor Y12
Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
Contextual Info: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.
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smd transistor y12transistor common base configurationg21 smd transistorsmd transistor y11+6y22 transistor smdsmd transistors code booksmd transistor y22tunnel diode" oscillatorsmd h21applications of ujt
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s22b
Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili
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bf181s22bs21bb 514 transistor+5bf 181bf181 transistoric s21bj bf181max s21b
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BF180
Abstract: bf181 BF200 8F180 hg1e BF182 tranzystor J BF181 CE25 T072
Contextual Info: T R A N Z Y S T O R Y n-p-n * BF180, BF181, BF200 14 - 74/2 SWW 1156-214 T ra n z y sto ry k rz em o w e p la n a r n e m a le j m ocy b a rd zo w ie lk ie j cz^stotliw oáci. T ra n z y sto r BF180 je st p rz ez n ac zo n y do sto so w an ia w r e gu lac y jn y ch sto p n iac h w zm acn iaczy U H F w glow icach
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bf180bf181bf2008f180+6hg1ebf182tranzystorj bf181ce25t072
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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AN215A
Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
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an215a/dan215amosfet p321y12t+7using linvill techniquescommon base amplifier circuit designingusing linvill techniques for r. f. amplifiersy11th21by12fcommon emitter amplifier circuit designing
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BF 183 transistor
Abstract: BF183 BF 528 transistor bf 175 Y21b y12b Oscillator CQE pour Y22b transistor BF 450
Contextual Info: BF 183 NPN SILICO N TRA N SISTO R, E P IT A X IA L PLAN AR T R A N S IS T O R NPN S IL IC IU M , P L A N A R E P IT A X IA L The NPN planar epitaxial BF 183 i; intended for use in V H F oscillator stages of television recei vers and generally for all V H F-U H F uses.
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-c12ebf 183 transistorbf183bf 528+7transistor bf 175y21by12boscillator cqepoury22btransistor bf 450
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Katalog tesla tranzistor
Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
Contextual Info: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
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tt346baf139tt346eit346b+10katalog tesla tranzistoroc26tesla kataloggs507156nu70tesla102nu71gf-50oc30 tesla2nu74
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UJT APPLICATION
Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
Contextual Info: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.
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ujt applicationsmd transistor y12tunnel diode" oscillatorsmd transistor y11+6y22 transistor smdsmd transistor g22y22cnf50y-parametertechnical explanations power transistor
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AFY42
Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Contextual Info: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in
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afy4260106-ybifi03u120+6103mhz400mgr22bgermanium transistorgermanium mesasz2b
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GS507
Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
Contextual Info: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
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r02n0vtt346baf139gs507+9katalog tesla tranzistortesla katalogoc169tranzistor cataloggs506156nu70gs508oc170oc30 tesla
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MC789P
Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series
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c300/m1000/mmc660c500/m+16c2100/mc2000c3000930/mc200/mc900/mmc789pmc946f/mc789pl9945mc2100 elsmc1110gmc787pmc879psg4002mc779pmc892p
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transistor smd bc rn
Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
Contextual Info: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.
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transistor smd bc rnsmd transistor y11g21 smd transistorsmd transistor y12+6smd transistor bc rntransistor ic equivalent booksmd y12gaas tunnel diodecommon collector configuration basicapplications of ujt
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BF194
Abstract: BF195 bf 194 BF131 BF-131 BP195 GA2E
Contextual Info: 16-71/2 T R A N Z Y S T O R Y n-p-n % BF194 i BF195 SWW 1156-213 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy w ie lk ie j czQstotliwosci. S 3 przezn aczo n e do sto so w an ia : — w sto p n iac h w ejéciow ych w z ak re sie fa l diu g ich , é red n ich i k rô tk ic h w o d b io rn ik a c h ra d io w y c h AM
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bf194bf195bf 194bf131+3bf-131bp195ga2e
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