B414E Search Results

TI33

Abstract: KS74HCT
Contextual Info: SAMSUNG SEMICONDUCTOR KS54HCTLS KS74HCTLS 107A INC DS D E | 7^b414E □□□ti333 2 | Dual J-K Negative-Edge-Triggered Flip-Flops with Clear FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS

km 1667

Abstract: KM732V696-13 KM732V696-15 KM732V6961
Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM Rev 0.0 ELECTRONICS 7*^4142 0G372b7 fllT This Material Copyrighted By Its Respective Manufacturer PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM 64K x 32 - Bit Synchronous Pipelined Burst SRAM FEA T U R ES G E N E R A L DESCRIPTIO N

ks57c4004

Abstract: D0321 0011B
Contextual Info: KS57C4004 ELECTRONICS M icrocontroller DESCRIPTION The KS57C4004 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With an A/D converter, LED direct-drive pins, 8-bit serial I/O interface, and an 8-bit timer/counter, the KS57C4004 offers an

Contextual Info: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: KA7522 ELECTR O NICS Industrial BALLAST CONTROL 1C 22 SDIP The KA7522 is a electronic ballast controller for fluorescent inverter syst­ ems. It contains whole function in KA7521, current feed back and prehea­ ting time controlled by temperature sensing.

Contextual Info: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 1 C 1 6 00 0 A /A L 7 A L L7 A S L is a high • Performance range: tRAC tCA C KM41C16000A/AL/ALL'ASL-5 50ns 13ns 90ns

Contextual Info: 1 About This Data Sheet This data sheet provides a technical overview of the Samsung 21164 Alpha microprocessor called the 21164 , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) summary

ks9241

Contextual Info: PRELIMINARY CMOS INTEGRATED CIRCUIT KS9241B CD-ROM DECODER 80 —QFP —1420C The KS9241B is a CD-ROM Decoder LSI for Real Time Data Decoding and Host Interface. It Is Suitable for CD-ROM Driver, CD-1 Players. FEATURES • • • • • • Corresponds to CD-ROM Mode 1 and CD-I (Mode 2) Formats.

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ400R12KE3_B1 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2$32%132214DDD& F3F23326F4&3 ' 6*6+,- ./01 6 2 6 . #F3BF23432&32F

KM44V4100BS

Abstract: Oi24 A10QZ
Contextual Info: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

KMM366F400BK

Contextual Info: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The

mbus acquisition

Abstract: mbus controllers 106 25K
Contextual Info: KS0155 ELECTR O NICS DSP The KS0155 is specifically designed for use in digital video decoding systems based on the MPEG2 algorithm. It receives transport packet data at a vaiable rate up to 29.27Mbps. Data is decompressed and clear video is passed on to the video reconstruction chip at 27MHz. The KS0155

Contextual Info: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616B4002-12 : 270 mA(Max.) KM616B4002-13:265 mA(Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

Contextual Info: KM68V1002A/AL CMOS S RAM ELECTRONICS 1 2 8 K x 8 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

Contextual Info: N-CHANNEL POWER MOSFETS IRF634 FEATURES • • • • • • • T O -2 2 0 Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

U07K

Abstract: 741i REF04 KM416S4020AT-12
Contextual Info: K M 4 16 S 4 0 2 1 A T SDRAM ELECTRONICS 2M x 16Bitx 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.

IRlZ14

Abstract: IRLZ10
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ14/10 FEATURES • Low er R ds< on • Excellent voltage stability • Fast sw itching spe eds • Ru gg ed polysilicon gate cell structure • Lo w er input ca p acita n ce • Extended sa fe operating area • Improved high tem perature reliability

Contextual Info: L*S E J> SAMSUNG ELECTRONICS' INC B Timms D 0102 SD =1 BSSM6 K KM44C1002 CM OS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1002 is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory.

Contextual Info: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO -92 • Collector-Emitter Voltage: Veto =40V • Collector Dissipation: Pe max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit Collector-Base Voltage

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ2400R12KE3 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2$%32&132214DDD' F3F23%326F4'3 *6+6, -./0 6 " 6 - #F3BF21432'32F%

Contextual Info: DRAM MODULE KMM53232004AK/AKG KMM53232004AK/AKG EDO Mode 32M X 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53232004A is a 32Mx32bits RAM high density KM M 53232004A memory consists of module. sixteen Dynamic The Samsung