B 856B Search Results

Contextual Info: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 PAR TM AR KIN G D ETAILS:BC 856A - 3A B C 858C - B C 856B - 3B BC 859A - 4A 3L B C 857A - 3E BC 859B - 4B B C 85 7 B - 3F B C 859C - 4C B C 85 7 C - 3G B C 8 6 0 A - 4E

ph 4148

Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31

bcb57b

Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Contextual Info: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80

TLP647

Abstract: 251C HA17431PA RWS30A-5 UC384 AW0118 ENS-24X LSG-12K-E esaC63 1SS178
Contextual Info: RWS30A RELIABILITY DATA if Utix —$ 1 DWG. Nol P A 7 6 1 - 8 0 - 01 & m 9-2-p-r, A n e m i c l a m b d \ S 11 c b ; l'Á z .o .a ÍS 101 INDEX PA G E 2. 3. C a lc u la te d V a lu e s o f M T B F -R - 1 -f v — 7 - 4 v ?

E6327

Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Contextual Info: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

Contextual Info: 123456 1789AB2CDE7B37FDE8B4D7AEB578B69D8 4B8F8D7 BA123B4B !7B69D8 " C#$$4 B989B3%778 #7&B'& 4D9A 8F8D7 BA123B4B !7B69D8 " #$$4 B" *#$$4 " #$$4 C77777BD246A4E5

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

Contextual Info: BC 856 . BC 860 Surface mount PNP-Si-Epitaxial PlanarTransistors PNP-Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung B ±0.1 C 2.5 max 0.4 Plastic case Kunststoffgehäuse 1.1 ±0.1 1.3 2.9 310 mW E Dimensions / Maße in mm

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

C5763

Abstract: D7678 DD652
Contextual Info:  3 635 DD 6 1 23 4 5 6 71 2 3 4 55 7 8 9 A 7B 9 A C D 71 E F  C  79   C   C      72  C   CD 7D  C D 6 7CCD7CD9 8C7&# 12=B&49DAB67B&F835D783&86D7 3ADB7 D37D5 D3!D7"78FD71869#8D6$B85D%3AD&&8'

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

Contextual Info: GENERAL PURPOSE SMD PNP TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection

BC transistor series

Abstract: BC849W BC856W BC857W BC858W BC859W transistor BC SERIES
Contextual Info: BC856W,BC857W,BC858W,BC859W SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 200 mWatts CURRENT 30/45/65 Volts SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Collector current IC = 100mA • Complimentary (NPN) Devices:BC846W/BC847W/BC848W/ BC849W Series

bc 212 equivalent

Abstract: siemens CIB
Contextual Info: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 846, BC 847, BC 849, BC 850 NPN

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

transistor 56B marking

Abstract: Transistor 59B 856B 858C BC856 MARKING bc847 SOT-23 B 856B
Contextual Info: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary PNP Devices : BC846/BC847/BC848/BC849 Series

BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Contextual Info: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag

transistor 56B marking

Contextual Info: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary PNP Devices : BC846/BC847/BC848/BC849 Series

transistor 56B marking

Abstract: 856B 858C BC856 BC857
Contextual Info: BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS 225 mW POWER VOLTAGE 65/45/30 Volts SOT- 23 Unit: inch mm .119(3.00) .110(2.80) .103(2.60) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series .047(1.20) .056(1.40)

transistor 56B marking

Abstract: TRANSISTOR BC 119
Contextual Info: BC856/BC857/BC858/BC859 SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER SOT- 23 225 mW Unit: inch mm FEATURES .103(2.60) .056(1.40) .047(1.20) Collector Current IC = -100mA Complimentary (NPN) Devices : BC846/BC847/BC848/BC849 Series

856AF

Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1998 Nov 10 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series FEATURES PINNING • Pow er dissipation com parable to S O T23

tbc857c

Abstract: TBC857B
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T FEATURES PINNING • Low curren t max. 100 mA

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES