ATC100A3R Search Results

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

MCR03J

Abstract: 0805 X7R ROHM MCH215 683j CAPACITOR 25X1 CMM1333 DCS-1800 IS-136 CMM1333-AK-OOTT
Contextual Info: 9 SSÍSRiTSK =• CMM1333 P re lim in a ry Product Inform ation D ecem ber 1997 1 of 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TL113

Abstract: tl201 TL217 w3 smd transistor transistor c111
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200

bipolar transistor ghz s-parameter

Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
Contextual Info: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in

Contextual Info: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,

ATC100A101JT

Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

TRANSISTOR C802

Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

RF Transistor s-parameter

Abstract: HBFP-0450 ADS MODEL HBFP0450
Contextual Info: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium

R1766

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

0805 X7R ROHM MCH215

Abstract: CMM1333 DCS-1800 IS-136 PB-CMM1333-AK 1009 so-8 MCR03J ATC100A3R MCH215C472KK
Contextual Info: 9 CELERÈTSK CMM1333 P relim inary Product Inform ation D ecem ber 1 9 9 7 1 of 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)

AN1955

Abstract: AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage

Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

Contextual Info: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced

C801

Abstract: 1/db3 c801
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage

42756 regulator

Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

ATC100A100JW

Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

Contextual Info: 9 ~ ze s L S B ir m K CMM1333 Prelim inary Product Inform ation S eptem ber 1996 1 o f 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)