TL106 Search Results

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

MIL-PRF-8805/98

Abstract: MIL-PRF-8805 TL-10632 3 POSITION TOGGLE SWITCH 6 pin
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER REV DOCUMENT 12 0011669 CHANGED DVM BY CHECK 05MAR05 AK 62AT22 SERIES CHART 1 C - NO C - NC OPPOSITE CENTER POSITION KEYWAY POSITION C - NO C - NC C - NO C - NC 62AT22-3 N ONE 1, 2 NO NE NONE 62 A T 2 2 - 7 2 * 1 *

MIL-PRF-8805/98

Abstract: 68AT22-5 MIL-PRF-8805 TL-10632 15PA313-AT
Contextual Info: Jl F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER -CORROSION RESISTANT LEVER, BUSHING AND BRACKET FAA-PMA A 4- 1 5 /3 2 - 3 2 NS THREAD TO WITHIN .0 6 2 OF SHOULDER B 14 0012387 BY CHECK 11APR05 AK CHANGED DVM 68 A T 2 2 - 1 1,2,3,4 5,6,7,8 NONE ALL 5,6*7,8 1,2,3,4

15PA90-6W

Abstract: cnc 12 64AT22-3D MIL-PRF-8805/98 TL-10632
Contextual Info: 4 F0 - 5511 2 - A HONEYWELL P A R T NUMBER 3 2 À . DOCUMENT 0012331 REV 16 C H A N G E D BY KSR 07APR05 CHECK AK 64AT22 SERIES CHART 2 CATALOG L IS T IN G ^ D — .090 APPROX PULLOUT TO CHANGE POSITION SEE PULLOUT FORCE 64A T 2 2-IA 64A T 22-IB 64AT22-ID

15PA90-6W

Abstract: 62AT11-3D TL-10632
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER 62AT11 SERIES CHART 2 REV DOCUMENT 14 0011669 CHANGED DVM BY CHECK 05MAR05 AK .3881.010 CAT. L IST . 3 4 ° ± 8 ° TOTAL TRAVEL 62A T11-3 43 DIA I7 ° ± 4 ° A F A A -P M A Í E Y W A Y P O S . C E N T E R P O S . OPPOSITE KEYWAY POS

3 POSITION TOGGLE SWITCH 3 pin

Abstract: MIL-PRF-8805/98 MIL-PRF-8805 TL-10632 3 POSITION TOGGLE SWITCH 6 pin
Contextual Info: MICRO SWITCH FREEPORT IL L IN O IS A OF D IV IS IO N rco. M FG . C A T A L O G L IS T IN G ASSEMBLY TOGGLE SWITCH U S A HONEYWELL cooc SIMS T H I» 64AT23 SERIES D R A W IN G HONEYW ELL COVENS T H IS A CHART 2 CVJ \— en < •.388±.0I0 . 0 9 0 APPROX PULLOUT

TL1 series

Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
Contextual Info: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

tl249

Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

Contextual Info: Catalog 1307612 Alcoswitch MTA Series REEN Revised 7-01 Tog gle S w itches, Baton, W ire Lug, 6 A m p SERIES MATERIAL SPECIFICATIONS: TYPICAL PERFORMANCE CHARACTERISTICS: Contacts .Gold flash over silver Actuator Material.Chrome plated copper alloy

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

TL235

Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency

Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.

C109 ceramic capacitor

Abstract: TL235
Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

PTFB212507SH

Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

TRANSISTOR tl131

Abstract: tl239
Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include

C205

Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications

PTFB090901EA

Contextual Info: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

PTFB090901

Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

TL145

Abstract: TL245 transistor c111 C216 TL152
Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960

fet 4712

Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS