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Kyocera AVX Components


Kyocera AVX Components 100A150FW150XT Silicon RF Capacitors / Thin Film 150volts 15pF 1%
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TTI	100A150FW150XT	Reel	5,500		500	1 - 10 - 100 - 1000 $5.76 10000 $5.76	Buy Now
Kyocera AVX Components 100A150GW250XT Silicon RF Capacitors / Thin Film 15PF 250V 2% 0505
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TTI	100A150GW250XT	Reel	4,000		500	1 - 10 - 100 - 1000 $3.93 10000 $3.66	Buy Now
Kyocera AVX Components 100A150JT150XT Silicon RF Capacitors / Thin Film 150volts 15pF 5%
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TTI	100A150JT150XT	Reel			500	1 - 10 - 100 - 1000 $3.20 10000 $3.20	Buy Now
Kyocera AVX Components 100A150GTN250XT1K Silicon RF Capacitors / Thin Film 15PF 250V 2% 0505
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TTI	100A150GTN250XT1K	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100A150JTN150XT500 Silicon RF Capacitors / Thin Film 15PF 150V 5% 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A150JTN150XT500	Reel			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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ATC100A150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	rf3928b ds120503	PDF
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	rf3928b ds120503	PDF
Contextual Info: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	ne5550979a r09ds0031ej0200 iec61000-4-2 ne5550979a-a	PDF
atc100a150 Abstract: power transistor gan s-band Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	rf3928b ds120503 atc100a150 power transistor gan s-band	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.	Original	mmrf1013h mmrf1013hr5 mmrf1013hsr5	PDF
ATC100A101JT Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	ne5550979a r09ds0031ej0200 iec61000-4-2 hs350 +6atc100a101jt waka 01k0790-20 atc100a3r3bw grm1882c1h101ja01 grm31cr72a105ka01b r-4775	PDF
R1766 Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	ne5550979a r09ds0031ej0300 iec61000-4-2 ne5550979a-a +1r1766	PDF
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	rf3928b ds130313	PDF
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	ne5550279a r09ds0033ej0200 ne55502ine ws260 +1hs350	PDF
TP5040 Abstract: ATC100A4R7DP50 100A120D ATC100A470JP50 ATC100A101 ATC100A470 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5040 The RF Line UH F P o w e r T ra n sisto r 40 W — 380 to 512 M Hz UHF POWER TRANSISTOR NPN SILICON . . . designed for 24 Volt UHF large-signal common emitter am plifier applications in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency	OCR Scan	tp5040 0a470jp50 atc100a4r7dp50 100a5r6dp50 +9atc100a150dp50 100a120dp50 atc100a101kp50 1n4007 bd135 100a120d atc100a470jp50 atc100a101 atc100a470	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	ptfb201402fc h-37248-4 17ubstances tl272 +9tl271 tl274 5228 voltage regulator tl279 tl246 c221 transistor tl-250 tl2741 hd 1077 o	PDF
Contextual Info: RF3928B RF3928B 380W GaN Wide-Band Pulsed Power Amplifier 2.8GHz to 3.4GHz The RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced	Original	rf3928b ds131001	PDF
RF3928B Abstract: power transistor gan s-band RF392 Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 	Original	rf3928b ds111208 power transistor gan s-band rf392	PDF
Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	ne5550279a r09ds0033ej0200 ne5550279a-a	PDF

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	mrf8p29300h mrf8p29300hr6 mrf8p29300hsr6	PDF
Panasonic R1766 Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	ne5550979a r09ds0031ej0300 iec61000-4-2 panasonic r1766	PDF
MRF8P29300H Abstract: ATC600F3R3BT250XT GRM32ER72A105K C3225JB2A105K GRM32ER72A105 RO3010 AN1955 GRM32ER72A105KA01L MCGPR63V477M16X32 ATC100B101JT500XT Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed	Original	mrf8p29300h mrf8p29300hr6 mrf8p29300hsr6 atc600f3r3bt250xt +8grm32er72a105k c3225jb2a105k grm32er72a105 ro3010 an1955 grm32er72a105ka01l mcgpr63v477m16x32 atc100b101jt500xt	PDF