NE5550279A Search Results

NE5550279A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE5550279A-A		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG	Original	PDF		8
NE5550279A-T1-A		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG	Original	PDF		8

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California Eastern Laboratories (CEL) NE5550279A-A RF MOSFET LDMOS 7.5V 79A
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DigiKey	NE5550279A-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE5550279A-T1-A RF MOSFET LDMOS 7.5V 79A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE5550279A-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation NE5550279A-T1A-A SILICON POWER LD MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NE5550279A-T1A-A		40,000		85	1 - 10 - 100 $4.22 1000 $3.79 10000 $3.56	Buy Now
Rochester Electronics	NE5550279A-T1A-A		40,000		1	1 - 10 - 100 $3.38 1000 $3.03 10000 $2.85	Buy Now
Renesas Electronics Corporation NE5550279A-A Transistors
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Vyrian	NE5550279A-A		1,149			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation NE5550279A-T1-A Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	NE5550279A-T1-A		733			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NE5550279A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A	PDF
Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A	PDF
ATC100A100JW Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150 Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF