GRM188B31C105KA92 Search Results
GRM188B31C105KA92 Price and Stock
Murata Manufacturing Co Ltd GRM188B31C105KA92D |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
GRM188B31C105KA92D | 20 | 14 |
|
Buy Now | ||||||
![]() |
GRM188B31C105KA92D | 16 |
|
Buy Now | |||||||
Others GRM188B31C105KA92DINSTOCK |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
GRM188B31C105KA92D | 3,694 |
|
Get Quote |
GRM188B31C105KA92 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 603, B, 1.0µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging |
Original |
GRM188B31C105KA92p 16Vdc) 180mm 330mm 16Vdc | |
Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 0603, B, 1.0µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging |
Original |
GRM188B31C105KA92p 16Vdc) 180mm 330mm 16Vdc | |
Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 0603, B, 1.0µF, 16Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging |
Original |
GRM188B31C105KA92p 16Vdc) 180mm 330mm 16Vdc | |
Contextual Info: Capacitors > Monolithic Ceramic Capacitors > Thin Layer Large Capacitance Type Data Sheet Monolithic Ceramic Capacitors GRM188B31C105KA92p 0603, B, 1.0µF, 16Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm Code |
Original |
GRM188B31C105KA92p 16Vdc) 180mm 330mm 16Vdc | |
Contextual Info: Middle Power Class-D Speaker Amplifiers Analog Input / BTL Output Class-D Speaker Amplifier No.10075EBT04 BD5424EFS ●Description BD5424EFS is a 20W + 20W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process technology |
Original |
10075EBT04 BD5424EFS BD5424EFS | |
LQW18AN4R7NG00
Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
|
Original |
NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01 | |
GRM21BR71A475KA73L
Abstract: GRM32ER71C226KE18L POWR607 smd 8A SCM40 lattice xp2 GRM188R11H104KA93 m1 smd transistor POWR1014A MPD6S022S
|
Original |
DC-04-A GRM21BR71A475KA73L GRM32ER71C226KE18L POWR607 smd 8A SCM40 lattice xp2 GRM188R11H104KA93 m1 smd transistor POWR1014A MPD6S022S | |
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm |
Original |
NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A | |
R1766Contextual Info: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) |
Original |
NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766 | |
100uf 16v murata tantalum
Abstract: GRM32EB31C226KE16 GRM188R11H104KA93 DC03A MPD6S012S MPDTY102S GRM32EB31C fpga altera XP06501 EP3C120
|
Original |
DC-03-A 100uf 16v murata tantalum GRM32EB31C226KE16 GRM188R11H104KA93 DC03A MPD6S012S MPDTY102S GRM32EB31C fpga altera XP06501 EP3C120 | |
CM105X5R105K25AContextual Info: No0024 Ver.002 Technical Information Paper Apr. 2010 外付け部品カタログ •周辺部品情報 ●周辺部品変更情報 カタログ内の DC/DC 使用回路例の周辺部品に型番変更及び生産中止のものが含まれています。 |
Original |
No0024 CD54-xxx CD75-xxx CR54-xxx CR75-xxx XB0ASB03A1B-G XB01SB04A2B-G XBS053V13R-Gï XBS104S13R-Gï U3FWJ44N CM105X5R105K25A | |
ic audio 5w 8 pin
Abstract: BD5424EFS GRM21BB31H105KA12 12v class d amplifier 40W GRM188R11H104KA93 GRM21BB31 Speaker 40W HTSSOP-A44 grm21bb31e335ka75 POWERFUL AUDIO IC IN 2012
|
Original |
09075EAT04 BD5424EFS BD5424EFS R0039A ic audio 5w 8 pin GRM21BB31H105KA12 12v class d amplifier 40W GRM188R11H104KA93 GRM21BB31 Speaker 40W HTSSOP-A44 grm21bb31e335ka75 POWERFUL AUDIO IC IN 2012 | |
Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) |
Original |
NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A | |
ATC100A100JW
Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
|
Original |
NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150 | |
|
|||
ne5550Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm |
Original |
NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550 | |
X7T voltage dependence
Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
|
Original |
ISO14001 C02E-17 X7T voltage dependence GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71 | |
NE5550779A-T1
Abstract: sma 906
|
Original |
NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906 | |
GRM32ER11
Abstract: GC 5.5V 0.33F GRM188B31E474KA75 GC 5.5V 0.10F GC 5.5V 0.22F 5.5V 0.47f GC B13101 GRM32EB30J476ME16 GRM21BB10J106KE01 grm218
|
Original |
C02J11 C02-11 GRM15/18/21/31 GRM32/43/55 GRM03 GRM03/15 IEC6038414 GRM32ER11 GC 5.5V 0.33F GRM188B31E474KA75 GC 5.5V 0.10F GC 5.5V 0.22F 5.5V 0.47f GC B13101 GRM32EB30J476ME16 GRM21BB10J106KE01 grm218 | |
BM81028
Abstract: stk403-130
|
Original |
BM81028AMWV BM81028AMWV BM81028 stk403-130 | |
Contextual Info: Middle Power Class-D Speaker Amplifiers Analog Input / BTL Output Class-D Speaker Amplifier No.10075EBT04 BD5424EFS ●Description BD5424EFS is a 20W + 20W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process technology |
Original |
BD5424EFS 10075EBT04 BD5424EFS R1010A |