MCR03J Search Results

NFM61R10T102

Abstract: TOKO VARIABLE INDUCTOR LL2012-F8N2K EV0037 NFM61R10T102T1 toko variable capacitor MCR03J104 LL2012-F3N9K R12468 EC-0037
Contextual Info: EC-0037 VARIABLE GAIN AMPLIFIER 500–3000 MHz Features Applications n Low Power Consumption Power-down Capability Range n 50 Ohm Matched n Wide Gain Control n High Linearity for Digital Systems n Single 3.0 to 5.0 V Operation n Open-collector Design Allows Reactive Matching

3F1 SMD Transistor

Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh
Contextual Info: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications

transistor l1w smd

Abstract: ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x
Contextual Info: CCS1930 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 32 dB ❏ +30 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2062 Applications

NE552R479A

Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.

mch215f104zp

Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

4069 NOT GATE IC

Abstract: NEC LDMOS
Contextual Info: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz

Contextual Info: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1

GL 7812

Abstract: ATC 2603 LDMOS NEC
Contextual Info: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:

Contextual Info: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz

SMD TRANSISTOR ANALOG

Abstract: SMD TRANSISTOR LIST CCS1930 CFK2062 CFK2062-P3 CMM1301 CMM1301-AM CSW2102 PB-CCS1930 SOIC-16
Contextual Info: CELERÊTEK g CCS1930 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set P roduct Inform ation M arch 1996 Oof 2 Features □ High Gain = 32 dB □ +30 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram 1 CMM1301 CFK2062 I

MCR03J

Abstract: 0805 X7R ROHM MCH215 683j CAPACITOR 25X1 CMM1333 DCS-1800 IS-136 CMM1333-AK-OOTT
Contextual Info: 9 SSÍSRiTSK =• CMM1333 P re lim in a ry Product Inform ation D ecem ber 1997 1 of 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)

100 micro farad capacitor

Abstract: capacitor 47 micro farad capacitor 100 micro farad ECG006 ECG00 MARUWA CAPACITORS "H series"
Contextual Info: ECG006 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 15 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 32 dBm Output IP3 at 1000 MHz 4.0 dB Noise Figure at 2000 MHz

100 micro farad capacitor

Abstract: capacitor 100 micro farad 1 micro farad capacitor 10 micro farad capacitor ECG004 capacitor 1 micro farad capacitor 47 micro farad capacitor 270 micro farad
Contextual Info: ECG004 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 16.2 dB Gain at 1000 MHz 13.5 dBm Output P1dB at 1000 MHz 28 dBm Output IP3 at 1000 MHz 3.2 dB Noise Figure at 2000 MHz

DCS1800

Abstract: NE5520279A NE5520279A-T1
Contextual Info: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15

M1555

Abstract: 04CS10N GRM1555C1H1R8CZ01D ATF-551M4 GRM1885C1H103K 04CS2N0 ATF551M4 connector ubs 0402CS-10NXJBW 0402CS-2N0XJBW
Contextual Info: A 3.5GHz WiMAX Low Noise Amplifier for CPE and BTS Application Using ATF-551M4 Application Note 5328 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial application in the VHF through 10GHz frequency

CL-21 capacitor

Contextual Info: €ELER!TEK CMM2321 Prelim inary P roduct Inform ation Novem ber 1996 iof 4 'J A ^ c p tt„ lU V r£ X Z 1 Watt Power Amplifier Features □ 48% Power Added Efficiency □ 31.5 dBm Output Power □ Low Distortion □ Low Cost SO-8 Surface Mount Package

m1301

Abstract: CELERITEK SWITCH 6 PIN SMD 3236 D0805 transistor d 1933 smd transistor pin out data celeritek amplifier
Contextual Info: e CELERITEK CCS1933 Product Information March 1 9 9 6 iof 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features □ High Gain - 35 dB □ +33 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram CFK2162 I Applications

2tx transistor

Abstract: A5V-35 AN-S011 ADA-4643 AN-003 MCR03J220 microstripline transistor BC 341 4643 AN-S001 Basic MODAMP MMIC Circuit Techniques
Contextual Info: Application Note for ADA-4643 +13.5 dBm Output P1dB Agilent Darlington Amplifier RF Out/Bias Ground Description Agilent Technologies’ Darlington Amplifier, ADA-4643 is a low current silicon gain block RFIC amplifier housed in a 4-lead SC-70 SOT-343 surface mount

capacitor 270 micro farad

Contextual Info: ECG004 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 16.2 dB Gain at 1000 MHz 13.5 dBm Output P1dB at 1000 MHz 28 dBm Output IP3 at 1000 MHz 3.2 dB Noise Figure at 2000 MHz

wy smd transistor

Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
Contextual Info: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations

SPF-3043

Abstract: SPF-3143 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C
Contextual Info: DESIGN APPLICATION NOTE - AN-066 SPF-3143 Amplifier Application Circuits Abstract This application note is intended to provide a reference point for an amplifier circuit design using Sirenza Microdevices’ SPF-3143 at 1960 MHz, in both dualbiased and self-biased configurations.

2052-1215-00

Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low

NE6510179A

Contextual Info: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz

100A5R1CP150X

Abstract: IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A ATC 1084
Contextual Info: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,