AS 205 TRANSISTOR Search Results

Contextual Info: HA R R I S S E M I C O N D SE C T O R HARRIS SÔE D • 4 3 G 2271 D Ü 4 5 bflO 205 H H A S 2N7273D, 2N7273H 2N7273H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS130 D, R, H Radiation Hardened N-Channel Power MOSFETs January 1993

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

TPV-3100

Abstract: TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100
Contextual Info: ADVANCED SEMICONDUCTOR, IN C TRANSISTORS FOR BROADCAST APPLICATIONS Vour Single Source for Transistors 7525 ETHEL AVE. * NORTH HOLLYWOOD, CAUFORNIA 91605 • U.S.A. TEL: 8 18 982-1200 ♦ (800) 423-2354 * FAX: (818) 765-3018 * e-mail: asiusa@asi.ccmail.compuserve.com

Contextual Info: DIONICS INC. 65 RU SH M O RE ST. W ES TBU RY, N Y 11S90 DTN203 - DTP203 5 1 6 *9 9 7 *7 4 7 4 DTN204 - DTP204 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN205 - DTP205 DTN206 - DTP206 A P P LIC A TIO N S : PLA SM A A N D GAS D IS C H A R G E . D IS P L A Y D R IV E R S • S W IT C H IN G R E G U L A T O R S

JANTX2N6796

Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
Contextual Info: 2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

2N6764 JANTX

Abstract: 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770
Contextual Info: 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor

transformerless variable frequency drive

Abstract: SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B
Contextual Info: SM8141 EL Driver OVERVIEW The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires few external components, making it ideal for compact driver units in portable equipment.

transformerless variable frequency drive

Abstract: LDR DIMENSIONS LDR resistor ldr block diagram LDR voltage range ldr 05 CF8141A CF8141B SM8141A SM8141B
Contextual Info: SM8141 EL Sheet Driver NIPPON PRECISION CIRCUITS INC. OVERVIEW PINOUT The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires

2SB1398

Contextual Info: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.

IC 7474

Abstract: 7474 ic 7474 ic specifications complementary npn-pnp power transistors 7474 ic chip DTN206 of 7474 ic Data Display 7474 complementary npn-pnp DTP206
Contextual Info: DIONICS INC. 65 RU SH M O RE ST., W ES TB U R Y . N Y. 11590 5 1 6 *9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN203 DTP 203 DTN204 DTP204 DTN205 - DTP205 DTN206 - DTP206 PLASM A AND G A S D ISC H A R G E D IS P L A Y D R IV E R S • SW IT C H IN G R E G U L A T O R S

EPC Gan transistor

Abstract: EPC1013
Contextual Info: DATASHEET EPC1013 EPC1013 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC1012

Abstract: EPC Gan transistor
Contextual Info: DATASHEET EPC1012 EPC1012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1398 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1950 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm • 1.8 V drive available • Low on-state resistance RDS(on)1 = 130 mΩ MAX. RDS(on)2 = 176 mΩ MAX.

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

ATC600S0R

Contextual Info: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

SSM4K27CT

Contextual Info: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications Unit: mm Top view • Suitable for high-density mounting due to compact package Low on-resistance: 0.2±0.02 Ron = 205 mΩ (max) (@VGS = 4.0 V)

DM 0265 R

Abstract: C 3807 transistor ym 238 dm 0265
Contextual Info: MOTOROLA SC X S TRS/ R F 12E 0 I k3£i7254 00ÖS5SG 4 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD44E3 D arlin g to n P o w e r T ra n s is to r DPAK For Surface Mount Application NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS . . . for general purpose power and switching output or driver stages in

Contextual Info: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications • Low on-resistance: Top view 0.05±0.04 Ron = 205 mΩ (max) (@VGS = 4.0 V) Ron = 260 mΩ (max) (@VGS = 2.5 V) 1.2±0.05 0.75 Ron = 390 mΩ (max) (@VGS = 1.8 V)

ic 7483 pin configuration

Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6

transistor 2A 3v

Abstract: MJD112
Contextual Info: DC COMPONENTS CO., LTD. MJD112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.