IAL66 Search Results

K102 P3

Abstract: K102 la 5531 DIN 50014 STANDARD F119 K102P K102P2 K102P3 DIN 50014 PS4030
Contextual Info: D TELEFUNKEN E LE CTRONI C • fl^üCHb GD077S1 3 IAL66 K 102 P TÏÏitLtiipyMKiNI electronic Creative Technologies -3 Construction: Emitter: Detector: Applications: Galvanically separated circuits, non-interacting switches

0252C

Abstract: DIN40040 RQK-10
Contextual Info: TELEFUNKEN ELECTRONIC Û1C ]> fiRSOORb QOObSlô 5 IAL66 T 1270 N Typenrelhe/Type range T1270N Elektrische Eigenschaften Electrical properties Höchszulässige Werte 3600 repetitive peak forward off-state and reverse voltages RMS on-state current average on-state current

BPW39

Abstract: CQX18
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ÖTEGO^b ODDflbME 3 CQX18 in iB J IF M K liM electronic _ T -H l-I I Cretbvi TfcchnoJogies GaAs Infrared Diode In plastic case Applications: IAL66 i: Radiation source in near infrared range Features: • Flat window

TFK 03 Diode

Abstract: TLHR0400 tfk 605 R0400 tfk 635
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Ô^EOCHb OOOöTMQ IAL66 Q TLH.0400 •¡mySRSMKIM electronic CrMtiv* Techno o9 4 S High Efficiency LEDs 0 10 mm in tinted diffused packages Technology Color Type High Efficiency Bed TLHR 040. GaAsP on GaP Yellow TLHY 040. GaAsP on GaP

transistor bc 237c

Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers

BPW75

Abstract: IAL66 cm5 marking
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 0000450 T IAL66 BPW75 IMUIPtiiniK electronic CrMtfv«TechnoioQt#* 1 Silicon Photo PIN Diode A p p lication s: High speed photo detector Features: • Fast response times i Angie of half sensitivity ± 9 *= 65° • Sm all junction capacitance

DIODE S3V 43

Abstract: DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08
Contextual Info: H&D J> ITEL-EFUNKEN ELECTRONIC m ß^EOO^b PÜD7b7? IAL66 CNR 21 TTIUStFQflMKlIM electronic _ Creative Technologies Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor

DIODE S3V 94

Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
Contextual Info: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor

transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Contextual Info: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:

TRANSISTOR BC 208

Abstract: transistor Bu 208 BU208A TRANSISTOR BC 208 B
Contextual Info: TELEFUNKEN ELECTRONIC 17E T> m fl'teQtHb 000^455 IAL66 BU 208 A •¡nyHPtUJMKIMelectronic CfMtiv*Tfcchnotogw T - 33 -0} Silicon IMPN Power Transistor Applications; Horizontal deflection circuits in colour TV-receivers Features: • High reverse.voltage • Power dissipation 12.5 W

S219P

Abstract: ep 1387
Contextual Info: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and

BF681

Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
Contextual Info: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure

Ko 368

Abstract: DIN40040 T388N TELEFUNKEN EL 156
Contextual Info: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00 Dbl 72 4 ■ AL 66 T Z 'Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung

TFK diode

Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Contextual Info: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)

TCST2001

Abstract: telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001
Contextual Info: TELEFUNKEN EL EC TR O N I C W fi^SüO^b Q007&3R b m k L G G J> TCST 1000 up to TCST 4001 tniQJltRLDKlCSiCÌI electronic _• ~7^ y / - 7 3 Creative Technologies Optoelectronic Interrupter without Aperture Construction: Emitter: GaAs-IR Emitting Diode

transistor BU 426 A

Abstract: BU426 transistor bc 237c transistor the 6 MHz transistor BF 375
Contextual Info: 17E $ • sssDoib oooma & BU 426 - BU 426 A I TELEFUNKEN ELECTRONIC ■üHLÜtFMKIK] electronic CreativeTetfinok>Q*i T - 33-/3 Silicon NPN Power Transistors Applications: Switching mode power supply features: • In triple diffussion technique • Short switching time

Transistor BC 227

Abstract: Electronic car ignition circuit IRF 940 TRANSISTOR Transistor S 637 T s637t TRANSISTOR G13 npn transistors 400V low power to92 A27 637 Marking Code A27 DIODE irf 940
Contextual Info: 1 TELEFUNKEN ELECTRONIC 1?E I> a^SOD^b ODGSbll fi • AL6C S 637 T electronic CrwtiWfochnotogtes Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application for high voltages where as very low input power is required

Photo d12

Abstract: telefunken remote control TFMP2360
Contextual Info: fe 1 TELEFUNKEN ELECTRONIC 17 E d m a ^ a o o ^ b ooofit>aa =i TFMP 2360 electronic Creative fein/io 's q -v* PRELIMINARY' SPECIFICATION PHOTO MODULE FOR PCM REMOTE C O N TR O L SYSTEMS PAGE 1 7 -41-67 CARRIER FREQUENCY : 36 kHz FEATURES: * PHOTO DETECTOR AND PRE AMPLIFIER IN ONE PACKAGE

CF-100

Abstract: A08 transistor 50B4DIN41867 bss25 A08 marking F100T a08 transistor to-50 transistor bf 203
Contextual Info: TELEFUNKEN ELECTRONIC aie d • a^socnb 0005340 Creative Technologies \ T - J f - N-Channel-GaAs-M ESFET-Tetrode Depletion M ode Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

BF963

Abstract: transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104
Contextual Info: TELEFUNKEN ELECTRONIC Û1C D • OOOSEMb 2 7^ -5 / BF 963 m f f l R M S I M electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for PM- and VHF TV-tuners up to 300 MHz

Contextual Info: TELEFUNKEN ELECTRONIC Û1C D • Ô^SOG'îb 00Dbl72 4 ■ AL66 T Z ' Z S “- / ? T388N ' Typenreihe/Type ränge T388N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, UflRM Periodische Vorwärts-und Rückwärts-Spitzensperrspannung

diode B14A

Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

8012-TCZT

Abstract: IP551 TCZT8013
Contextual Info: TELEFUNKEN ELECTRONIC I ÛSeüG^b 0DQ7Ô7S T H A L 6G TCZT 8012 -TCZT 8013 iM electronic Creative Technologies Matchable Pairs - Emitter and Detector Emitter: Detector: Applications: ~ — r 'y / 7 / GaAs IR Emitting Diode Silicon NPN Epitaxial Planar Phototransistor

U2351B

Abstract: U2351 2351B PWM IC 6-PIN DIP
Contextual Info: 44E D • 01200% 0010b43 4 ■ ALS6 U 2351 B • U 2351B-FP 'W PW M SPEED CONTROL FOR PERMANENT EXCITED DC MOTORS Technology: Bipolar TELEFUNKEN ELECTRONIC Features: ' T 5 Z .-1 3 - 1 S • Pulse width control up to 30 kHz clock frequency • Push-pull output stage