BPW39
Abstract: CQX18
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ÖTEGO^b ODDflbME 3 CQX18 in iB J IF M K liM electronic _ T -H l-I I Cretbvi TfcchnoJogies GaAs Infrared Diode In plastic case Applications: IAL66 i: Radiation source in near infrared range Features: • Flat window
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carel
Abstract: CQX18 BPW39
Contextual Info: CQX18 'w Galliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: S trahlungsquelle im nahen Infrarotbereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Kunststoffgehäuse « T O 92 • Plastic case
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1n57221n57231n57241n5725+161n62641n62651n62662004-90xx2600-70xx2n5777-80h0a0872-n55h0a1405-1h0a0865-l51h0a1405hoa708-1hoa9til78 phototransistormoc70t3ir diode til38h0a1874-12
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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aa113aa117aa119bav17+14bav18bav19bav20bav21cqx 87germaniumaeg thyristor t 558 ftda 2516bu208bf506la 4430bf963tda1086transistor bf 175
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