AMPLIFIER MARKING 4 Search Results

LM358F

Abstract: amplifier K743 marking 43 amplifier marking _1
Contextual Info: SEMICONDUCTOR LM358F MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking 2. Marking No. 2007. 12. 17 1 LM358F 2 K 743 3 Item Marking Description Device Name LM358F Dual Operational Amplifier Trade Name K KEC CORP Lot No. 743 Revision No : 0

transistor 033

Abstract: MMBT5088 MMBT5089 marking 1R NPN
Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)

Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)

TRANSISTOR SMD MARKING CODE 210

Abstract: SMD Transistor Y14 TRANSISTOR SMD MARKING CODE 304 a TRANSISTOR SMD MARKING CODE X D marking code br SMD TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE PD transistor smd code marking 102 transistor smd arx TRANSISTOR SMD MARKING CODE 304 h
Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1 FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR

Contextual Info: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped

Contextual Info: SIEMENS CGY93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package

G3JL

Abstract: GBAD sot 23 r2a
Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS Type Function Marking IC VCEO VEBO mA max V V BC817-25 * amplifier G6A-C 800 45 5 BC847B * amplifier G1E-G 100 45 6 BC848B * amplifier G1J-L 100 30 5 BCW31 AF/HF amplifier GD1 100 32 5 BCW32 AF/HF amplifier

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

amplifier 900mhz

Abstract: amplifier siemens marking RF 98 CGY93P
Contextual Info: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P

Contextual Info: BSS63 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. E SOT-23 Mark: T3 B Ordering Information Part Number Marking Package Packing Method

Contextual Info: BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method

BFR90 transistor

Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Contextual Info: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50

93 ab chip

Contextual Info: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93

Contextual Info: MMBTA55 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from process 73. E SOT-23 Mark: 2H B Ordering Information Part Number Marking Package Packing Method

MBC13720 application notes

Abstract: 4-611 motorola
Contextual Info: Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking Package MBC13720T1 20 SOT-363 The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz

BFR92R

Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Contextual Info: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23

Contextual Info: BSR18A PNP General-Purpose Amplifier Description C This device is designed as a general-purpose amplifier for switching applications at collector currents of 10 A to 100 mA. Sourced from process 66. E SOT-23 Mark: T92 B Ordering Information Part Number Marking

5252 F ic

Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Contextual Info: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65

transistor mar 823

Abstract: BFR91A BFR91A transistor MAR 637 transistor BFR91A MAR 747
Contextual Info: Tem ic BFR91A Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR91A Marking: BFR91A Plastic case TO 50

MBC13720

Abstract: MBC13720T1 low noise amplifier 0947
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking

MAR 618 transistor

Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Contextual Info: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50

UTC 225

Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE

Contextual Info: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value