Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    AGR09180E Search Results

    AGR09180E Datasheets (4)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AGR09180E
    		TriQuint Semiconductor 180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF 392.82KB 9
    AGR09180EF
    		Agere Systems FET, 180W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF 179.86KB 10
    AGR09180EF
    		TriQuint Semiconductor 180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF 392.82KB 9
    AGR09180EU
    		Agere Systems FET, 180W, 865MHz-895MHz, N-Channel E-Mode, Lateral MOSFET Original PDF 26.94KB 2

    AGR09180E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AGR09180EF

    Abstract: JESD22-C101A
    Contextual Info: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		agr09180efhz--895ds04-123rfppds04-031rfpp+1jesd22-c101a PDF

    AGR09180EF

    Abstract: JESD22-C101A transistor z14 L
    Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		agr09180efhz--895suit-20agr19k180u+2jesd22-c101atransistor z14 l PDF

    C40 Sprague

    Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
    Contextual Info: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		agr09180ehz--895ds04-031rfppds02-342rfpp+7c40 spraguec201az25 transistorut-141aagr09180efagr09180eujesd22-c101a PDF

    z24 mosfet

    Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global


    Original     		agr09180efhz--895ds04-123rfppds04-031rfpp+1z24 mosfet PDF

    c5047

    Contextual Info: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		agr09180ehz--895ds02-342rfppc5047 PDF

    c5047

    Abstract: JESD22-C101A AGR09180EF 100B3R9BW 100B4R7 100B4R7BW
    Contextual Info: Preliminary Data Sheet April 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		agr09180efhz--895ds04-155rfppds04-123rfpp+5c5047jesd22-c101a100b3r9bw100b4r7100b4r7bw PDF

    AGR09180E

    Abstract: AGR09180EF AGR09180EU JESD22-A114
    Contextual Info: Preliminary Product Brief April 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		agr09180ehz--895pb03-082rfppagr09180ef+2agr09180eujesd22-a114 PDF

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		cus937tga2517tqp6m9002tqm653029+7tgs4304sg-o1-16tga2503tat7469tga9092-scc854651ah125 PDF

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		tga2517tqp6m9002tqm7m5013tga4943-sl+6cgb241tqm6m4003bt ag402tga4956-smtqm6m4048tga9092-scc PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8app550tmagr09085efapp550tm and app530tm400-khzagra 30taad08ju2agr09030efagr09030gum PDF