AGRA10E
Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable
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agra10eis-95c32/fds03-161rfpp+6ds03-038rfppagr045010agra10eujesd22-c101a2743019446tns capacitors
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AGR045010
Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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agra10eis-95ds04-096rfppds03-161rfpp+4agr045010agra10eujesd22-c101arf mosfet class ab
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tns capacitors
Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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agra10eis-95ds04-196rfppds04-096rfpp+3tns capacitorscapacitor f3 037 02100b120fw500x
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8app550tmagr09085efapp550tm and app530tm400-khzagra 30taad08ju2agr09030efagr09030gum
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