AGRA10E
Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable
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agra10eis-95c32/fds03-161rfpp+6ds03-038rfppagr045010agra10eujesd22-c101a2743019446tns capacitors
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AGR045010
Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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agra10eis-95ds04-096rfppds03-161rfpp+4agr045010agra10eujesd22-c101arf mosfet class ab
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tns capacitors
Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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agra10eis-95ds04-196rfppds04-096rfpp+3tns capacitorscapacitor f3 037 02100b120fw500x
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