100B3R9BW Search Results

Contextual Info: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

ATC capacitor 100b

Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
Contextual Info: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

AGR09180EF

Abstract: JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

marking Z4

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

J293

Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
Contextual Info: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

AGR09180EF

Abstract: JESD22-C101A transistor z14 L
Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global

AGRA10E

Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
Contextual Info: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable

Contextual Info: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with

MRF9130L

Abstract: MRF9130LR3 MRF9130LSR3
Contextual Info: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

C40 Sprague

Abstract: C201A Z25 transistor UT-141A AGR09180E AGR09180EF AGR09180EU JESD22-C101A
Contextual Info: Preliminary Data Sheet November 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

capacitor 2220

Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1

"RF power MOSFETs"

Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

200B103MW

Abstract: 100B5R6CW
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

z24 mosfet

Contextual Info: AGR09180EF 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code-division multiple access (CDMA), global

TRANSISTOR J477

Abstract: krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1
Contextual Info: Preliminary Data Sheet April 2003 AGR21010E 10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular, personal communications system (PCS), digital communication system (DCS), and

JESD22-C101A

Abstract: AGR09060GF AGR09060GU 06F150
Contextual Info: Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

tns capacitors

Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

c5047

Contextual Info: Preliminary Data Sheet October 2003 AGR09180E 180 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

25C1740

Abstract: marking E5 amplifier marking Z4 A113 A114 A115 AN1955 C101 JESD22 MRF5S9101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 3, 5/2006 Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.