100A470JW Search Results

AGR09030GUM

Abstract: JESD22-C101A RF35
Contextual Info: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

T2G405528-FSEVB2

Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

J293

Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
Contextual Info: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor

ATC 100pf 0603 CAPACITOR

Abstract: 100A470JW150X RF 900MHz schematics for a PA amplifier GRM39X7R102K050V GSM transmitter LL1608-FH8N2K MAX2235 grm39x7r471k050 DASF0023420
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, pa, power amplifiers, transmitter, ism band, gsm, rf ics, integrated circuits May 01, 2002 APPLICATION NOTE 1005 Ultra-Low Cost +30dBm PA for GSM and 900MHz-ISM Applications Abstract: This application note, based on the MAX2235 power amplifier PA shows the operation in GSM and

Contextual Info: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features

AGR26180EF

Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

AGR09045XUM

Abstract: JESD22-C101A RF35 z24 mosfet RK73H2A10R0F
Contextual Info: Preliminary Data Sheet April 2004 AGR09045XUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

T1G4005528-FS

Abstract: C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094
Contextual Info: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features

MAX2235

Abstract: RMC16-000T amplifier 900mhz 142-0701-801 LL1608-FH8N2K MAX2235EUP gsm amplifier schematic
Contextual Info: WIRELESS, RF, AND CABLE May 01, 2002 Ultra-Low Cost +30dBm PA for GSM and 900MHzISM Applications This application note, based on the MAX2235 power amplifier PA shows the operation in GSM and 900MHz ISM band applications. +30dBm of output power is achieved with 40 percent efficiency. The device provides

HP8482A

Abstract: GRM42-6Y5V LL1608-FH8N2K capacitor 100pF 0805 datasheet GRM39COG MAX2235 MAX2235EVKIT HP8482 grm39x7r471k050 testing capacitors using a meter
Contextual Info: 19-1463; Rev 0; 5/99 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs

Contextual Info: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband ampliiers Product Features

HP8482A

Abstract: HP8482 GRM39COG101J 100A470JW150 HP8648C
Contextual Info: 19-1463; Rev 2; 10/00 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs

LL1608-FH8N2K

Abstract: MAX2235 MAX2235EVKIT testing capacitors using a meter SHORT NODE ON IC DEVICE 100A470JW
Contextual Info: 19-1463; Rev 2; 10/00 MAX2235 Evaluation Kit The MAX2235 evaluation kit EV kit simplifies evaluation of the MAX2235 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs

RK73H2A10R0F

Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J
Contextual Info: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

RK73H2A10R0F

Abstract: AGR09045GUM JESD22-C101A RF35 RM73B2b103j z24 mosfet
Contextual Info: Preliminary Data Sheet October 2004 AGR09045GUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Contextual Info: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

mmds

Abstract: AGR26180EF J500 JESD22-C101A
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,