MMDS Search Results

6 ghz amplifier 10w

Contextual Info: Advance Product Information October 31, 2008 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: TRF1115 www.ti.com SLWS174A – APRIL 2005 – REVISED APRIL 2006 2.5-GHz, High Dynamic Range, Low-Noise Down-Converter FEATURES • • • • • • 20 19 18 17 16 RFAGC MXRPB TRF1115 TOP VIEW MXRI • DEVICE INFORMATION GND • • Performs First Down-Conversion in MMDS /

Contextual Info: RF5300 Proposed 3V, 5GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11a/n WLAN Applications • Commercial and Consumer Systems • HyperLAN • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems Product Description

TRF1123

Abstract: TRF1123IRTMR TRF1123IRTMRG3 TRF1123IRTMT TRF1123IRTMTG3 TRF1223
Contextual Info: TRF1123 www.ti.com SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006 2.1-GHz to 2.7-GHz 1-W Power Amplifier FEATURES • • • • • • VPOS 1.5 W P-1 dBm Linear, 30-dB Gain Transmitter Operates Over the MMDS, MDS, and WCS Bands 2.1 GHz to 2.7 GHz

AD9753

Abstract: AD9753AST AD9753ASTRL AD9753-EB P1B10 Opt pam circuit
Contextual Info: 12-Bit, 300 MSPS High Speed TxDAC+ D/A Converter AD9753* APPLICATIONS Communications: LMDS, LMCS, MMDS Base Stations Digital Synthesis QAM and OFDM GENERAL DESCRIPTION The AD9753 is a dual, muxed port, ultrahigh speed, singlechannel, 12-bit CMOS DAC. It integrates a high quality 12-bit

K 1358 fet transistor

Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

1X605

Abstract: 1X606
Contextual Info: Model 1X606 Rev. A Directional Couplers 6 dB Description The 1X606 is a low profile 6dB directional coupler in an easy to use miniature surface mount package for MMDS and WLAN applications. The 1X606 is ideal for inline split/combine amplifiers and for power injection and

MRFG35003N6T1

Abstract: A113
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6 Rev. 5, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6T1 Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in

NES2427P-60

Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power CW with high

Contextual Info: 2500 - 2700 MHz Modular Amplifier QB-432 Parameters Guaranteed Guaranteed 25°C • MMDS applications -33 to +55°C 2500 - 2700 40.0 ± 2.0 Units Frequency range Small signal gain Gain vs. temperature Gain flatness Reverse isolation VSWR Input Output 1 dB compression

mmds

Abstract: MIG2425 MIG25
Contextual Info: MIG2425 ISM & MMDS Omnidirectional Antenna The MIG2425 is designed to cover frequencies from 2400 to 2686 MHz with a VSWR of less than 1.5:1. This rugged antenna can fit a wide variety of applications, including office LAN environments, factories, remote telemetry

max 16801 pspice

Abstract: 40J100
Contextual Info: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

HMC235QS16G

Abstract: HMC307QS16G DIGITAL ATTENUATOR up to 31 dB
Contextual Info: MICROWAVE CORPORATION v06.0503 HMC307QS16G 1dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, DC - 4 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC307QS16G is ideal for: 1 dB LSB Steps to 31 dB • Cellular Single Control Line Per Bit • PCS, ISM, MMDS

5k ohm resistor

Abstract: HITTITE SOT HMC290 Digital Attenuator
Contextual Info: MICROWAVE CORPORATION HMC290 v00.0600 2 dB LSB GaAs MMIC 2-BIT DIGITAL ATTENUATOR, 0.7 - 4.0 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC290 is ideal for: 2 dB LSB Steps to 6 dB • Cellular Single Positive Control Per BIT • PCS, ISM, MMDS

HMC273MS10G

Contextual Info: HMC273MS10G v02.1100 MICROWAVE CORPORATION 1 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.7 - 3.7 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC273MS10G is ideal for: 1 dB LSB Steps to 31 dB • Cellular Single Positive Control Per BIT • PCS, ISM, MMDS

3A625

Contextual Info: Model 3A625 Rev B Balun Transformers 50Ω to 25Ω Balanced Description The 3A625 is a low profile balanced to unbalanced transformer designed for pushpull amplifiers in an easy to use surface mount package for W-LAN and MMDS applications. These compact Xinger surface mount baluns are ideal for high

PCB Rogers RO4003 substrate datasheet

Abstract: 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 TGA2924-SG MIL-C-2 Rogers RO4003 substrate
Contextual Info: Advance Product Information Aug 16, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched

Contextual Info: TRF1123 www.ti.com SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006 2.1-GHz to 2.7-GHz 1-W Power Amplifier FEATURES • • • • • • VPOS 1.5 W P-1 dBm Linear, 30-dB Gain Transmitter Operates Over the MMDS, MDS, and WCS Bands 2.1 GHz to 2.7 GHz

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: P r o d u c t S p e c i f i c a t i o n s Ultraflex MMDS Transverters Broadband Wireless Access Ultraflex is a two-way frequency division duplexed ® fixed CPE transverter for last-mile wireless local loop access. It is used along-side a subscriber terminal

Contextual Info: P r o d u c t S p e c i f i c a t i o n s UHS Series UltraFlex Hub Sector MMDS and ISM Base Station Antennas The Ultraflex UHS Series MMDS and ISM base ® station antennas are highly discriminative antennas for use in fixed broadband wireless systems. These systems typically utilize cellularization and

PS-1341

Contextual Info: P r o d u c t S p e c i f i c a t i o n For Demanding RF Environments Brickwall Series Integrated MMDS Downconverters Now MMDS system designers and engineers can improve system performance with a product designed to operate in the most demanding of RF environments, while also protecting the LNA from

476 10k

Abstract: XO5080 XO5080 OCXO
Contextual Info: XO5080 Series OCXO CRYSTAL OSCILLATORS Applications PCS Base Stations Cellular Base Stations Digital Switching Test Equipment Synthesizers LMDS/MMDS ESMR/SMR Features Compact Design High Stability SC-cut or AT-cut Low Phase Noise Fast Warm Up Surface Mount

Contextual Info: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class