5 WATT S-BAND POWER AMPLIFIER Search Results
5 WATT S-BAND POWER AMPLIFIER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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5 WATT S-BAND POWER AMPLIFIER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GRM39COG221J050AD
Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
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MMA707 MMA707-3030 A17014 GRM39COG221J050AD A17014 MMA707 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A | |
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications
Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR
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5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR | |
Contextual Info: 1997 MTT Presentation Stabilizing Mosfet Amplifiers Polyfet Rf Devices S. K. Leong Stabilizing Mosfet Amplifiers • • • • • • • Series Gate Resistance Shunt Gate Resistance Drain Gate Feedback Drain Shunt Resistance Ferrite Loading Gate Circuit |
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AVANTEK solid state
Abstract: AVANTEK awp AWP-64200RM MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek
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ACU-64100 AWP-64200 1-800-AVANTEK ACU-64100RM, AWP-64200RM CMR-137 CPR-137 MS3102A14S-6P AVANTEK solid state AVANTEK awp MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek | |
MOBILE jammer GSM 1800 MHZ circuit diagram
Abstract: MOBILE jammer GSM 1800 MHZ mobile jammer circuit design gsm gsm mobile jammer jammer gsm mobile jammer circuit long range jammer gsm block diagram of wireless watt meter mobile phone jammer jammer circuit for mobile communication diagram
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662a-20
Abstract: MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260
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dB/20 MAV-11 662a-20 MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260 | |
FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
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FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK | |
2 Watt rf Amplifier
Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
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D000G4D HMC139 HMC139 2 Watt rf Amplifier 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D | |
lm4136
Abstract: LM 358 lm 324 759 Power Operational Amplifiers OPERATIONAL AMPLIFIER LM 741 2 channel 40 watt audio amplifier 12l8 LM 1709 Operational Amplifiers operational amplifier LM 324 comparator
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LF147/LF347 155/L F156/L LF351 LF353 TL081 TL082 lm4136 LM 358 lm 324 759 Power Operational Amplifiers OPERATIONAL AMPLIFIER LM 741 2 channel 40 watt audio amplifier 12l8 LM 1709 Operational Amplifiers operational amplifier LM 324 comparator | |
Contextual Info: 'ìD D m e S G00D04D ÔSb •HTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier |
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G00D04D HMC139 HMC139 | |
Contextual Info: Model SM2040-37 2000-4000 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & WLL APPLICATIONS The SM2040-37 is a small, highly linear amplifier designed for multipurpose use in military and wireless applications. Operating from 2 to 4 GHz, the amplifier is |
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SM2040-37 SM2040-37 | |
Contextual Info: =1004125 0 0 0 0 0 3 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 JANUARY 1994 ! * - ■ ’ ii ■ IB js s Features ■ ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER |
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HMC138 90NDPADS | |
GSC371BAL2000
Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
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1930MHz FLL400IP-2 1930-1990MHz 720mA 96GHz GSC371BAL2000 Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band | |
TURRET, 0.064
Abstract: westermo td-32 b SM2325-37HS
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SM3436-37HS SM3436-37HS SM2325-37HS TURRET, 0.064 westermo td-32 b SM2325-37HS | |
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DC bias of gaas FET
Abstract: uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90
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HMC138 HMC138 T004125 DC bias of gaas FET uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90 | |
1/C9000 - 60005
Abstract: B/C9000 - 60005 R/C9000 - 60005
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AN-60-005 AN-60-005 M150261 AN60005 1/C9000 - 60005 B/C9000 - 60005 R/C9000 - 60005 | |
Contextual Info: ir » \ SS HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power A m p lifie r HMC139 FEBRUARY 1995 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description Typical Performance The HMC139 is a GaAs MMIC amplifier |
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HMC139 HMC139 | |
RAYTHEON
Abstract: Raytheon Company RMPA61810 2 watt rf transistor
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RMPA61810 RMPA61810 RAYTHEON Raytheon Company 2 watt rf transistor | |
55LTContextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes |
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200mA 55LT | |
transistor amplifier 3 ghz 10 watts
Abstract: 10 watt power transistor
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720-5A transistor amplifier 3 ghz 10 watts 10 watt power transistor | |
Contextual Info: 1720 - 2 2 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes |
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1417 transistor
Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
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417-12A 1417 transistor transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic | |
transistor 60 wattContextual Info: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes |
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1718-32LContextual Info: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier |
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1718-32L 1718-32L |