5 WATT S-BAND POWER AMPLIFIER Search Results

GRM39COG221J050AD

Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
Contextual Info: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power

Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR
Contextual Info: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 brad_millon@cree.com Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak

Contextual Info: 1997 MTT Presentation Stabilizing Mosfet Amplifiers Polyfet Rf Devices S. K. Leong Stabilizing Mosfet Amplifiers • • • • • • • Series Gate Resistance Shunt Gate Resistance Drain Gate Feedback Drain Shunt Resistance Ferrite Loading Gate Circuit

AVANTEK solid state

Abstract: AVANTEK awp AWP-64200RM MS3102A-14S-6P Avantek amp Avantek amplifier Avantek amplifier 140 AWP-64200 1-800-AVANTEK Avantek
Contextual Info: O aw n tek Satellite Communications: Uplink Power Amplifiers Features ACU-64100 RM • High Linearity • High Gain • Low/No Maintenance • Long Life • Fail Soft • C Band Description Avantek's C Band satellite uplink power amplifiers are designed to provide exceptionally high linearity. They may be

MOBILE jammer GSM 1800 MHZ circuit diagram

Abstract: MOBILE jammer GSM 1800 MHZ mobile jammer circuit design gsm gsm mobile jammer jammer gsm mobile jammer circuit long range jammer gsm block diagram of wireless watt meter mobile phone jammer jammer circuit for mobile communication diagram
Contextual Info: Global Position System Low Noise Amplifier GPS, LNA, Sensitivity, Jamming, Cohabitation, TTFF This White Paper explains why an external low noise amplifier results in a better performance. Next generation mobile handsets will be equipped with GSM, WLAN, Bluetooth and GPS.

662a-20

Abstract: MS2601A omega 650 HP 435B 435B 662a fluke 8050a plotter hp 7470A anritsu MS260
Contextual Info: LZY-2 ULTRA LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN TABLE OF CONTENTS 1.0 General Description 2.0 Electrical Performance Specifications 3.0 Mechanical Specifications 4.0 Electrical Featuress 4.1 Overdrive Protection

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

2 Watt rf Amplifier

Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
Contextual Info: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier

lm4136

Abstract: LM 358 lm 324 759 Power Operational Amplifiers OPERATIONAL AMPLIFIER LM 741 2 channel 40 watt audio amplifier 12l8 LM 1709 Operational Amplifiers operational amplifier LM 324 comparator
Contextual Info: Section 1 Operational Amplifiers s Section 1 Contents Operational Amplifiers Definition of T e rm s . Operational Amplifiers Selection G uid e.

Contextual Info: 'ìD D m e S G00D04D ÔSb •HTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier

Contextual Info: Model SM2040-37 2000-4000 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & WLL APPLICATIONS The SM2040-37 is a small, highly linear amplifier designed for multipurpose use in military and wireless applications. Operating from 2 to 4 GHz, the amplifier is

Contextual Info: =1004125 0 0 0 0 0 3 0 ITfl • H T M HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 JANUARY 1994 ! * - ■ ’ ii ■ IB js s Features ■ ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 WATT OUTPUT POWER

GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Contextual Info: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band

TURRET, 0.064

Abstract: westermo td-32 b SM2325-37HS
Contextual Info: Model SM3436-37HS 3400-3600 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & BWA APPLICATIONS The SM3436-37HS is a solid state GaAs amplifier designed primarily for multiple wireless markets. With 200 MHz of bandwidth, the amplifier can be used in Industrial Scientific Medical ISM ,

DC bias of gaas FET

Abstract: uly 2003 15 watt power amplifier " 15 GHz" 10041E MO-90
Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC138 FEBRUARY 1995 Features fi wmË ON-CHIP MATCHING CIRCUITRY * *• ttm m tm m t 30% POW ER-ADDED EFFICIENCY 12dB GAIN FROM 2 TO 4GHz 2.5 W ATT OUTPUT POWER General Description Typical Performance

1/C9000 - 60005

Abstract: B/C9000 - 60005 R/C9000 - 60005
Contextual Info: AN-60-005 APPLICATION NOTE LZY-2+ and LZY-2X+ ULTRA-LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN AN-60-005 Rev.: C M150261 (04/14/15) File: AN60005.doc This document and its contents are the properties of Mini-Circuits.

Contextual Info: ir » \ SS HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power A m p lifie r HMC139 FEBRUARY 1995 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description Typical Performance The HMC139 is a GaAs MMIC amplifier

RAYTHEON

Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

55LT

Contextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

transistor amplifier 3 ghz 10 watts

Abstract: 10 watt power transistor
Contextual Info: 1720 - 5A 5 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1720-5A is a COMMON BASE transistor capable of providing 5 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

Contextual Info: 1720 - 2 2 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 1720-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

1417 transistor

Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Contextual Info: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier

transistor 60 watt

Contextual Info: 1719 - 20 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION CASE OUTLINE The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

1718-32L

Contextual Info: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier