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    AGRB10E Search Results

    AGRB10E Datasheets (2)

    Agere Systems
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AGRB10E
    		Agere Systems 10 W, 1.0 GHz - 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF 52.75KB 7
    AGRB10E
    		Agere Systems FET Transistor, 10W, 1GHz to 2.7GHz, N-Channel E-Mode Original PDF 52.92KB 7

    AGRB10E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AGRB10E

    Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
    Contextual Info: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)


    Original     		agrb10eds04-097rfppds03-164rfppagrb10e equivalent+2jesd22-c101a1661 mhz PDF

    AGRB10E

    Abstract: JESD22-C101A Inmarsat
    Contextual Info: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)


    Original     		agrb10eenvir32/fds03-164rfppds03-038rfpp+2jesd22-c101ainmarsat PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		ca03-005rfpp-7ca03-005rfpp-6agra10emapp550+8app550tmagr09085efapp550tm and app530tm400-khzagra 30taad08ju2agr09030efagr09030gum PDF