2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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T092
Abstract: ZTX552 ZTX553
Contextual Info: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES * 100 volt Vc.o 1 Amp continuous * Ptot= 1 Watt * current I ABSOLUTE MAXIMUM I RATINGS. E-Line T092 Compatible -~ ~rnitter-Base Voltage -——— v EBO — Peak Pulse Current
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Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX552 ZTX553 ISSUE 1 - MARCH 94_ FEATURES * 100 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * P,ot= 1 W a tt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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ZTX552
Abstract: ZTX553 ZTX553 equivalent DSA003769
Contextual Info: ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE sat - (Volts)
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ztx552ztx553ic/10-150ma+4-50ma100mhzztx553 equivalentdsa003769
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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Contextual Info: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX552 ZTX553 UNIT Collector-Base Voltage
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Tip300
Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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202ac220ab126vartip300+92sa8140bcx53 rohm2sa8150rohm 6ae2sa1358ymm40062sa1358-y2sa8152sb631 hitachi
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Contextual Info: ZTX552 Not Recommended for New Design Please Use ZTX553 ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current
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ZTX552
Abstract: ZTX452 ferranti E-Line package Scans-00107857
Contextual Info: 4 semiconductors FERRANTI ZTX552 PNP Sil icon Planar M e d iu m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb » 25*C. • hFE specified up to 1 amp. • High V CE0 up to 80 volts. • Complementary to ZTX452. GENERAL DESCRIPTION
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ztx552ztx452ferrantie-line package+1scans-00107857
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ZTX553
Contextual Info: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 A\ FEATURES * 100 Volt V CE0 * 1 Am p continuous current * Pt„,=1 tot W att M 4f E-Line T 09 2 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX552 ZTX553 Collector-Base Voltage
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2TX552
Abstract: SE82
Contextual Info: PNP Silicon Planar Medium Power Transistors ZTX552 ZTX553 FEATURES • • • High power dissipation: 1W at Tamb= 2 5 °C hFE specified up to 1A High fT: 200MHz typical DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and
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ztx552ztx553200mhz100mhz+22tx552se82
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m 60 n 03 g10
Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60
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7057fl2n2907a2n2907bcy70+4bcy71bcy722n4403m 60 n 03 g10
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ZTX751
Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ztx455ztx454ztx653ztx753+10ztx453ztx652ztx552ztx452mpsa56mpsa06ztx751ztx651ztx551ztx337
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BC338C
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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mpsa55ztx750ztx550bc327a+15bc327bbc327cbc328abc328bbc328cbc338c2n18932n21022n24052n4036bfx84bfx85zt86zt88zt91
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple ment
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ZTX107
Abstract: ZTX108 ZTX452 BC546P BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, AND GENERAL PURPOSE
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transistor ZTX302
Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE
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ztx453ztx452ztx552mpsa06+13mpsa56bc546pbc556pztx451bc558bbc558ctransistor ztx302ztx502transistor ztx304bfs98ztx109transistor mpsa06transistor ztx108
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BC337B
Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA
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mn2510
Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @
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ot-223stn878stn724stn690a+16stn749stn888stn826stn790a2stn25402stn1550mn25102sc5200, 2sa1943, 2sc5198sanken mn2510transistor replacement guide hsd882skec sot89ztx617transistor replacement guidereplacement sanken mn25102sc5198 cross references2sa1941 "cross reference
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ZTX301
Abstract: BC557P BFS60 BFS98 ZTX108 BC546P BC556P BFS61 MPSA06 MPSA56
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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BC338C
Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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bc177
Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE
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BFS98
Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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ZTX651
Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
Contextual Info: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.
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ztx6535ztx753ztx652ztx752+8ztx651ztx751ztx650ztx750ztx6495ztx749ztx692bscans-00107860
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