TP592
Abstract: tp610 TP647 TP616 TP602 TP606 TP604 TP613 TP588 TP591
Contextual Info: Steel Utility Boxes & Covers UTILITY BOXES – CUBIC INCH CAPACITY SEE BELOW 4" LONG x 21/8" WIDE Cat. # TP591 Bracket TP592, TP600, TP602 KNOCKOUTS Sides Bottom TP598 TP594, TP596, TP604, TP606, TP595 (41/8" × 23/8") Std. Unit Pkg. Wt. Lbs. Per 100 3 – 1/ 2"
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tp591tp592tp600tp602+10tp598tp588tp647tp594tp596tp604tp610tp616tp606tp613
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MOSFET 2301
Abstract: cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093
Contextual Info: M C N 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Date 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 Page
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lvds/12/15c1232c1230470pf+16pr412pr169pr168pc175pc174c1309mosfet 2301cxd9872cxd9872ka6019ah41 cps ec nvsmbx149mmc2301a6806tx39d80vc1gaatransistor c1093
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AR5212
Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)
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isl6225vccar5212ar5312diode 39b2+7ar5112 ar5213ar5211st c739fd507u508-3ar533ct516
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54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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rc410mdsb450ba41-00615asheet18+15sheet19sheet20tp682tp685tp68654b2hh-1m1608-600jt20b3 diodetp807tp889hh-1m1608rc410mir 30d1 7etp828t9504
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TP4221
Abstract: BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer 9,. V BR GSS loss (V) (A) Min (S) Max 2.5m 2.5m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m ;3.om 3.0m 3.0m 3.0m 3.0m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m
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tp55562n5556mpf4220ke4220+12pn4220smp4220tmpf4220tp4220tp4221bfw122sk34ke42212n4221 motorolabf2562n42202sk34 fet
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tp5950
Contextual Info: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits
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00q3b01tp4858atp4659tp4859a+7tp4860tp4860atp4861tp4861atp4867tp4868tp5950
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TP4221
Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1n9141n41481n41501n5229+161n52301n52311n52321n52331n52341n5235bc 7-25 pnptransistor bc 7-252n5245 transistor2n3819 cross referenceto-266aa2n3904 731jfet arraybfr30 "cross reference2n5308 cross reference266aa
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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bcw29bcw30bcw61abcw61b+11bcw61cbcw61dbcw68fbcw68gbcw69bcw70tp4093tmpt5401ma 723tmpt2907tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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MPF103
Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
Contextual Info: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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C6426
Abstract: C6419 c6492 Inventec C6384 STV 5v sense DG board C6782 D1047 C6464 powerpad_4a
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-8 - DOTHAN PROCESSOR 9-13 - ALVISO 14-17 - DDR 18-20 - ATI_M24_P 21-22 - VGA DDR 23-27- ICH6-M 28 -LCD INTERFACE 29 - HDD CONNECTOR 30 - CD-ROM CONNECTOR
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r6970r6971c2507c2505+16r2502r2509127107mh020g200ztfix2501fix2502fix2500c6426c6419c6492inventecc6384stv 5v sense dg boardc6782d1047c6464powerpad_4a
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PLC0755P
Abstract: Inventec su508 Inventec VAIL 2.0 35C61 HP multibay C3008 S101B inventec vail 1.0 47N217
Contextual Info: HUANG SHAN SI2 - BUILD - FINAL 2005.02.28 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : HUANG SHAN SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF AX2 68
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2N5458
Abstract: TP4221
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions
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PS8121E
Abstract: f2116te20v c4589 AN12946 PS8121 C4574 SLG8SP568V cx20561-15z schematic diagram lcd monitor lenovo lenovo
Contextual Info: Intel Penryn DC, QC, Extream Processor 3,5 June 18 ' 08 AGTL+ FSB UNBUFFERED DDR3 SODIMM Normal/Reverse Socket N-note Block Diagram ITP Conn. UNBUFFERED DDR3 SODIMM Normal/Reverse Socket Channel B 1067/800MHz Keyboard Light LVDS Intel Cantiga-PM DDR3 1067/800MHz
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1067/800mhz4y901mlf68r5534+15204-pintpad34tp580usbp519usbp619ps8121ef2116te20vc4589an12946ps8121c4574slg8sp568vcx20561-15zschematic diagram lcd monitor lenovolenovo
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e304 fet
Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092
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bf256bbf256lb2sk121esm4092+14mfe2005mpf4416uc21492n4978pn4304e304 fet2sk581siliconix e304mpf4860tp5950interfetbf256spn4222u199
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AES2501
Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :
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controllerp1311tp1312tp1313tp1314+16tp1251tp1252tp1253tp1254tp1255tp1256aes2501ics954305tp960c703 diodetp1332vdd3310tp95033b3 diodedebug32block diagram of intel 8254 chip
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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2N6485
Abstract: 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117
Contextual Info: T triìfif t i r il f i iij iv n i’T n " f * ALLEGRO MICROSYSTEMS INC' 33E D .s , • , Q50433Ô QOOSb'lb ô I B À L 6 R -os TO*92/TO-226AA ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS<óH Device Type ^ BHKiSS Min. @fQ - (V) 2N3819 TP3821 TP3822 TP3823
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tp5950
Contextual Info: ALL E GR O MICROSYSTEMS 8514019 INC =13 SPRAGUE. D • GS0M33Ö G G O B b O l S ■ ALGR SEM ICO NDS/ IC S 93D 03601 J> P LA ST IC -C A SE JUNCTION FIELD-EFFECT T RA N SISTO R S N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH V(BR1GSS Limits
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gs0m33tp4858atp4859tp4859a+7tp4860tp4860atp4861tp4861atp4867tp4868tp5950
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765
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PDTA144E
Abstract: CXD98 H0068NL R1453 Diode C1280 TPS2231 a6019 MAX8734AEEI T A6806 R1318
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Rev. 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00
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s-vi2/15c1232c1230470pf+16pr412pr169pr168pc175pc174c1309pdta144ecxd98h0068nlr1453diode c1280tps2231a6019max8734aeei ta6806r1318
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b712 smd
Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
Contextual Info: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood
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sfd-p10kscd-p10k24sdd-p10k8srw-p10k8+16sfd-p10escd-p10e24sdd-p10e8srw-p10e82200maieee1394b712 smdschematic diagram inverter 2000wic25n040mt702ct712mhn2200atr888 smb diodetp2256tp2350c840 dell
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