E112 FET
Abstract: E112 N-Channel FET SILICONIX E112 2SK582 2SK518J MMBF4861 KE4093 TO226AA MMBF4860 InterFET
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g. Max loss Max (V) (A) VOS(off) Min (S) Max Clas Max (F) PD Max (W) Derate at (WrC) Toper Max eC) Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 2SK582 UG251 KE4861 MMBF4861 PN4861
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2sk582ug251ke4861mmbf4861+13pn4861smp4861smp4861atmpf4861tmpf4861ae112 fete112 n-channel fetsiliconix e1122sk518jke4093to226aammbf4860interfet
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tp5950
Contextual Info: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits
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00q3b01tp4858atp4659tp4859a+7tp4860tp4860atp4861tp4861atp4867tp4868tp5950
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TP4221
Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS
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-92ito-226aa2n3819tp3821+7tp3822tp3823tp3824tp4091tp4092tp4093tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1n9141n41481n41501n5229+161n52301n52311n52321n52331n52341n5235bc 7-25 pnptransistor bc 7-252n5245 transistor2n3819 cross referenceto-266aa2n3904 731jfet arraybfr30 "cross reference2n5308 cross reference266aa
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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bcw29bcw30bcw61abcw61b+11bcw61cbcw61dbcw68fbcw68gbcw69bcw70tp4093tmpt5401ma 723tmpt2907tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1n9141n41481n41501n4565+161n4565a1n45661n4566a1n45701n4570a1n4571bc 7-25 pnptransistor bc 7-25transistor 724731 zener diodetransistor b 722transistor bc 2n2222transistor bc 176mps6521transistor 2n5952tp2222a transistor
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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dd03b01tp4858anj132tp4859+8tp4859ao-226aa/styles2n5485tp5668nj16tp4860tp4860atp4861
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2N5458
Abstract: TP4221
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions
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2n3819tp3821tp3822tp3823+8tp3824tp4091tp4092tp4093tp4117tp41182n5458tp4221
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DIODE 20B2
Abstract: TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A
Contextual Info: SAMSUNG X06 GUO LEI ZHOU JUN DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHEN TAO CHECK KEVIN LEE APPROVAL X06 BA92-03859A BA41-00529A MP 1.0 2005-6-25 Dothan Intel Alviso + ICH6-M Internal Gfx. Aquila-So
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sheet10sheet11sheet12sheet13+15sheet14sheet15sheet16sheet17sheet18sheet19diode 20b2tp4213tp265830b4 diode37 tv samsung lcd schematic circuit diagramtp5000alviso-gm30b4ba92-03859a
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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3tp4715tp47165tp4717tp4718+167tp4719tp47209tp4721tp4722tp4728tp4729tp5000tp5056tp4506tp5351tp5046tp4656tp4650tp4780tp5006tp5299
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2N6485
Abstract: 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117
Contextual Info: T triìfif t i r il f i iij iv n i’T n " f * ALLEGRO MICROSYSTEMS INC' 33E D .s , • , Q50433Ô QOOSb'lb ô I B À L 6 R -os TO*92/TO-226AA ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS<óH Device Type ^ BHKiSS Min. @fQ - (V) 2N3819 TP3821 TP3822 TP3823
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92/to-226aa2n3819tp3821tp3822+10tp3823tpu1897tpu1898tpu18992n6485tp3824tp4091tp4092tp4093tp4117
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C65 004
Abstract: A65 SMD W17 SMD transistor SMD w35 Transistor w33 SMD sot 23 w45 SOT A29 SMD epson c87 smd a60 smd transistor a68
Contextual Info: TLV320AIC10 EVM User’s Guide February 2000 AAP Data Converter Group SLWU003 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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tlv320aic10slwu00312x3xpeg36ts-tbr+124-feb-2000a3\evms\aic10evmc65 004a65 smdw17 smd transistorsmd w35 transistorw33 smd sot 23w45 sota29 smdepson c87smd a60smd transistor a68
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tp5950
Contextual Info: ALL E GR O MICROSYSTEMS 8514019 INC =13 SPRAGUE. D • GS0M33Ö G G O B b O l S ■ ALGR SEM ICO NDS/ IC S 93D 03601 J> P LA ST IC -C A SE JUNCTION FIELD-EFFECT T RA N SISTO R S N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH V(BR1GSS Limits
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gs0m33tp4858atp4859tp4859a+7tp4860tp4860atp4861tp4861atp4867tp4868tp5950
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765
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TP4213
Abstract: TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4
Contextual Info: SAMSUNG X06 Dothan Intel Alviso + ICH6-M Internal Gfx. Sheet1. Sheet2. Sheet3. Sheet4. Sheet5. Sheet6. Sheet7. Sheet8. Sheet9. Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. Sheet20. Sheet21. Sheet22. Sheet23. Sheet24.
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sheet10sheet11sheet12sheet13+16sheet14sheet15sheet16sheet17sheet18sheet19tp4213tp265830b4 diodediode 20b2diode 30b4tp4203tp2923alc66537 tv samsung dvd schematic circuit diagram26c4
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C27-C36
Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
Contextual Info: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#
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page45page476870bec27-c36+9tp5000m1535 a1rs200mtp4506tp5056tp4721tp5860j5027tp4456
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