tp5950
Contextual Info: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits
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00q3b01tp4858atp4659tp4859a+7tp4860tp4860atp4861tp4861atp4867tp4868tp5950
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TP4221
Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS
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-92ito-226aa2n3819tp3821+7tp3822tp3823tp3824tp4091tp4092tp4093tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1n9141n41481n41501n5229+161n52301n52311n52321n52331n52341n5235bc 7-25 pnptransistor bc 7-252n5245 transistor2n3819 cross referenceto-266aa2n3904 731jfet arraybfr30 "cross reference2n5308 cross reference266aa
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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bcw29bcw30bcw61abcw61b+11bcw61cbcw61dbcw68fbcw68gbcw69bcw70tp4093tmpt5401ma 723tmpt2907tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1n9141n41481n41501n4565+161n4565a1n45661n4566a1n45701n4570a1n4571bc 7-25 pnptransistor bc 7-25transistor 724731 zener diodetransistor b 722transistor bc 2n2222transistor bc 176mps6521transistor 2n5952tp2222a transistor
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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dd03b01tp4858anj132tp4859+8tp4859ao-226aa/styles2n5485tp5668nj16tp4860tp4860atp4861
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2N5458
Abstract: TP4221
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions
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2n3819tp3821tp3822tp3823+8tp3824tp4091tp4092tp4093tp4117tp41182n5458tp4221
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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3tp4715tp47165tp4717tp4718+167tp4719tp47209tp4721tp4722tp4728tp4729tp5000tp5056tp4506tp5351tp5046tp4656tp4650tp4780tp5006tp5299
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tp5950
Contextual Info: ALL E GR O MICROSYSTEMS 8514019 INC =13 SPRAGUE. D • GS0M33Ö G G O B b O l S ■ ALGR SEM ICO NDS/ IC S 93D 03601 J> P LA ST IC -C A SE JUNCTION FIELD-EFFECT T RA N SISTO R S N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH V(BR1GSS Limits
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gs0m33tp4858atp4859tp4859a+7tp4860tp4860atp4861tp4861atp4867tp4868tp5950
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765
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C27-C36
Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
Contextual Info: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#
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page45page476870bec27-c36+9tp5000m1535 a1rs200mtp4506tp5056tp4721tp5860j5027tp4456
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E110 FET
Abstract: TIS58 fet MOTOROLA J210 TIS58 JF1033B J300 Siliconix JF1033S InterFET 16M SOT-23 ta82
Contextual Info: JUNCTION FET Item Number Part Number Y BR GSS loss 9f. (V) (A) Min (S) Max 800u 1.0m 800u 4.5m 800u 1.5m 1.5m 6.0m 6.0m 400u 25 25 25 25 25 25 25 25 1.0m 1.5m 1.6m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 4.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m :;prgue~,ec
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mpf109wbft46mpf109rjf1033b+13mpf109nj204-18mpf256smp5668e110 fettis58 fetmotorola j210tis58j300 siliconixjf1033sinterfet16m sot-23ta82
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