2N6485
Abstract: 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117
Contextual Info: T triìfif t i r il f i iij iv n i’T n " f * ALLEGRO MICROSYSTEMS INC' 33E D .s , • , Q50433Ô QOOSb'lb ô I B À L 6 R -os TO*92/TO-226AA ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS<óH Device Type ^ BHKiSS Min. @fQ - (V) 2N3819 TP3821 TP3822 TP3823
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92/to-226aa2n3819tp3821tp3822+10tp3823tpu1897tpu1898tpu18992n6485tp3824tp4091tp4092tp4093tp4117
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TP4119
Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*
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0d03bq0tp3369tp3370tp3458+1091-aoo-226aa/stylestp41192n3819 field-effect transistorsnj132tp3823tp43922n3819nj16nj32
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2SK117BL
Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F)
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m
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2n30692n3069andf9406ndf9407+13ndf9408ndf9409ndf9410uc2402sk117blnec 2sk1632sk68a2sk163 to922sk1632sk117-bl2sk523m2sk105 to922sk117-bl(f
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TP4221
Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS
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-92ito-226aa2n3819tp3821+7tp3822tp3823tp3824tp4091tp4092tp4093tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1n9141n41481n41501n5229+161n52301n52311n52321n52331n52341n5235bc 7-25 pnptransistor bc 7-252n5245 transistor2n3819 cross referenceto-266aa2n3904 731jfet arraybfr30 "cross reference2n5308 cross reference266aa
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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bcw29bcw30bcw61abcw61b+11bcw61cbcw61dbcw68fbcw68gbcw69bcw70tp4093tmpt5401ma 723tmpt2907tp4221
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1n9141n41481n41501n4565+161n4565a1n45661n4566a1n45701n4570a1n4571bc 7-25 pnptransistor bc 7-25transistor 724731 zener diodetransistor b 722transistor bc 2n2222transistor bc 176mps6521transistor 2n5952tp2222a transistor
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2N5458
Abstract: TP4221
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions
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2n3819tp3821tp3822tp3823+8tp3824tp4091tp4092tp4093tp4117tp41182n5458tp4221
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TP4221
Abstract: TP4304 TP4303
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC T> m =13 8 5 1 4 0 1 9 SP RA GU E, GS0433Û D D 0 3 b G D 3 • ALGR SEMI C O N D S / ICS 9 3 D 03600J 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH)
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gs043303600jtp3369tp3370+9tp3458tp3459tp34602n3819tp3821tp3822tp4221tp4304tp4303
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TP4221
Abstract: 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC
Contextual Info: •• - f * ALLE6R0 MICROSYSTEMS INC' 33E D • • .'••■•'v v Q5G433Ô QOGSb'ib Ô « [ AL GR ; if.: ■ ■ ïâ M S e M ■Æ ÊÊm '■"h ^ - o s T O *9 2 / T O - 2 2 6 A A ELECTRICAL CHARACTERISTICS a t T\ = 25°C A - ^GSioff Óóvlce Type V)
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q5g4332n3819tp3821tp3822+10tp3824tp4091tp4092tp4093tp4117tp4118tp42212n 5459dsg20allegro m i c r o s y s t e m s inc
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