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    TP3460 Search Results

    TP3460 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TP3460
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.76KB 1
    TP3460
    		National Semiconductor 7 V, ISDN interface USART Scan PDF 596.42KB 15
    TP3460
    		Sprague N-Channel JFETS Scan PDF 230.85KB 3

    TP3460 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N600

    Abstract: TX4-RX4 TP3420 TP3460 ECMA-102 IV110 tx1 controllo temperature
    Contextual Info: TP3460 PRELIMINARY National Semiconductor TP3460 ISDN R Interface USART General Description Features The TP3460 is a USART which, when connected to a con­ trol processor running the appropriate software with ac­ cess to an ISDN B-channel, enables a standards compliant


    OCR Scan     		tp3460ecma-102tl/h/10729-9tl/h/10729-10+6tl/h/10729-112n600tx4-rx4tp3420iv110tx1 controllo temperature PDF

    VCLK

    Contextual Info: PRELIMINARY TP3460 1/WXNational AA Semiconductor TP3460 ISDN R Interface USART General Description Features The TP3460 is a USART which, when connected to a con­ trol processor running the appropriate software with ac­ cess to an ISDN B-channel, enables a standards compliant


    OCR Scan     		tp3460ecma-102vclk PDF

    P3460

    Contextual Info: M arch 1990 TP3460 ISDN R Interface USART General Description The TP 3460 is a U SART w hich, w hen co nn e cte d to a co n ­ trol p roce sso r running th e appropriate softw are w ith a c­ cess to an ISDN B-channel, enables a sta n d ard s com pliant


    OCR Scan     		tp3460ele017p3460 PDF

    TP4119

    Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
    Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*


    OCR Scan     		0d03bq0tp3369tp3370tp3458+1091-aoo-226aa/stylestp41192n3819 field-effect transistorsnj132tp3823tp43922n3819nj16nj32 PDF

    isdn chip bit error rate

    Abstract: isdn chip "bit error rate" Q.931 V.110, V.120 LM3678A 20C89 TP3451N TP3420 "General Circuit Interface" C1995 TP3076
    Contextual Info: ISDN Terminals and Terminal Adapters ISDN Terminals and Terminal Adapters National Semiconductor System Brief 102 May 1990 SYSTEM DESCRIPTION The implementation of ISDN will not only bring benefits such as improved efficiency and bandwidth to the operating


    Original     		isdn chip bit error rateisdn chip "bit error rateq.931 v.110, v.120lm3678a+620c89tp3451ntp3420general circuit interfacec1995tp3076 PDF

    2SK30ATMY

    Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
    Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687


    Original     		2n3068a2sk3812sk433ke3687+11pn36872n36872sk30atmy2sk30atm ypn43382sk68a-kmpf38222sk160a2sk117y2sk514e2sk30atm-y PDF

    DMS-100

    Abstract: 5D5-900-311 Q.931 V.110, V.120 Call Progress Tone generator ISDN TE adapter chips AN-664 C1995 TP3076 TP3420 TP3460
    Contextual Info: National Semiconductor Application Note 664 Telenetworks February 1990 PREFACE This System Design Guide is intended to aid a system design engineer in implementing an ISDN Basic Rate Interface BRI Terminal Equipment (TE) application The Design Guide is divided into the following sections


    Original     		20-3adms-1005d5-900-311q.931 v.110, v.120+7call progress tone generatorisdn te adapter chipsan-664c1995tp3076tp3420tp3460 PDF

    TP4221

    Abstract: TP4304 TP4303
    Contextual Info: ALL E GR O M I C R O S Y S T E M S INC T> m =13 8 5 1 4 0 1 9 SP RA GU E, GS0433Û D D 0 3 b G D 3 • ALGR SEMI C O N D S / ICS 9 3 D 03600J 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH)


    OCR Scan     		gs043303600jtp3369tp3370+9tp3458tp3459tp34602n3819tp3821tp3822tp4221tp4304tp4303 PDF