TP592
Abstract: tp610 TP647 TP616 TP602 TP606 TP604 TP613 TP588 TP591
Contextual Info: Steel Utility Boxes & Covers UTILITY BOXES – CUBIC INCH CAPACITY SEE BELOW 4" LONG x 21/8" WIDE Cat. # TP591 Bracket TP592, TP600, TP602 KNOCKOUTS Sides Bottom TP598 TP594, TP596, TP604, TP606, TP595 (41/8" × 23/8") Std. Unit Pkg. Wt. Lbs. Per 100 3 – 1/ 2"
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TP605
Abstract: tp610 TP604 TP588 TP602 TP606 tp647 TP594 TP616 TP592
Contextual Info: 140-141.qxp 7/22/2010 2:38 PM Page 140 Steel Utility Boxes & Covers UTILITY BOXES – CUBIC INCH CAPACITY SEE BELOW 4" LONG x 21/8" WIDE Steel Boxes UL LISTED TP588, TP647 TP591 TP592, TP600, TP602 TP598 TP605 TP594, TP596, TP604, TP606, KNOCKOUTS Cat. #
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RT9713
Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
Contextual Info: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS
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v/5v/12v31-aug-2004cn6035rt9713+9c6091c6093r61531c6090c6085c6092inventec vail 1.0inventec070912fr015s200zu
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AR5212
Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)
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isl6225vccar5212ar5312diode 39b2+7ar5112 ar5213ar5211st c739fd507u508-3ar533ct516
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54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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rc410mdsb450ba41-00615asheet18+15sheet19sheet20tp682tp685tp68654b2hh-1m1608-600jt20b3 diodetp807tp889hh-1m1608rc410mir 30d1 7etp828t9504
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tp5950
Contextual Info: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits
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TP4221
Contextual Info: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1n9141n41481n41501n5229+161n52301n52311n52321n52331n52341n5235bc 7-25 pnptransistor bc 7-252n5245 transistor2n3819 cross referenceto-266aa2n3904 731jfet arraybfr30 "cross reference2n5308 cross reference266aa
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tp4093
Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Contextual Info: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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C6426
Abstract: C6419 c6492 Inventec C6384 STV 5v sense DG board C6782 D1047 C6464 powerpad_4a
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-8 - DOTHAN PROCESSOR 9-13 - ALVISO 14-17 - DDR 18-20 - ATI_M24_P 21-22 - VGA DDR 23-27- ICH6-M 28 -LCD INTERFACE 29 - HDD CONNECTOR 30 - CD-ROM CONNECTOR
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PLC0755P
Abstract: Inventec su508 Inventec VAIL 2.0 35C61 HP multibay C3008 S101B inventec vail 1.0 47N217
Contextual Info: HUANG SHAN SI2 - BUILD - FINAL 2005.02.28 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : HUANG SHAN SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF AX2 68
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MEC5025-NU ec
Abstract: ECE1077 ece5021 BCM5906 EMC4001 fds8884 RN752 WISTRON MEC5025-NU amp foxconn
Contextual Info: 5 4 3 2 1 D D Beyonce UMA Schematics Document C C uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 2008-05-12 B B REV : -5 DELL:A00 <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size
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MEC5025-NU amp
Abstract: MEC5025-NU ec fds8884 TPS2231 foxconn Wistron Corporation Beyonce UMA Wistron Corporation AT49 FLASH MEMORY FILE schematic intel g41 stac9228x5
Contextual Info: 5 4 3 2 1 D D Beyonce UMA Schematics Document C C uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 2008-02-21 B B REV : -2 DELL:A00 DB5 A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Beyonce UMA
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2N5458
Abstract: TP4221
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions
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PS8121E
Abstract: f2116te20v c4589 AN12946 PS8121 C4574 SLG8SP568V cx20561-15z schematic diagram lcd monitor lenovo lenovo
Contextual Info: Intel Penryn DC, QC, Extream Processor 3,5 June 18 ' 08 AGTL+ FSB UNBUFFERED DDR3 SODIMM Normal/Reverse Socket N-note Block Diagram ITP Conn. UNBUFFERED DDR3 SODIMM Normal/Reverse Socket Channel B 1067/800MHz Keyboard Light LVDS Intel Cantiga-PM DDR3 1067/800MHz
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1067/800mhz4y901mlf68r5534+15204-pintpad34tp580usbp519usbp619ps8121ef2116te20vc4589an12946ps8121c4574slg8sp568vcx20561-15zschematic diagram lcd monitor lenovolenovo
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e304 fet
Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092
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AES2501
Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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transistor c1417
Abstract: Transistor C1915 transistor C1906 c1915 transistor CXD9872AKD c1583 transistor NS682403P cxd9872 c1417 transistor Transistor C1904
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Title of Schematics Page Schematics Page Index Block Diagram
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ck505r2310rp109rp110+16rp111rp112rp105rp106rp107rp108transistor c1417transistor c1915transistor c1906c1915 transistorcxd9872akdc1583 transistorns682403pcxd9872c1417 transistortransistor c1904
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2N6485
Abstract: 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117
Contextual Info: T triìfif t i r il f i iij iv n i’T n " f * ALLEGRO MICROSYSTEMS INC' 33E D .s , • , Q50433Ô QOOSb'lb ô I B À L 6 R -os TO*92/TO-226AA ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS<óH Device Type ^ BHKiSS Min. @fQ - (V) 2N3819 TP3821 TP3822 TP3823
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tp5950
Contextual Info: ALL E GR O MICROSYSTEMS 8514019 INC =13 SPRAGUE. D • GS0M33Ö G G O B b O l S ■ ALGR SEM ICO NDS/ IC S 93D 03601 J> P LA ST IC -C A SE JUNCTION FIELD-EFFECT T RA N SISTO R S N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH V(BR1GSS Limits
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765
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