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    T3906 Search Results

    T3906 Datasheets (26)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge MMBT3906T
    SLKOR Original PDF
    badge MMBT3906
    JCET Group PNP epitaxial planar transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain hFE of 100-300. Original PDF
    badge MMDT3906
    JCET Group Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W power dissipation, and DC current gain up to 300. Original PDF
    badge MMBT3906T(RANGE:100-300)
    JCET Group PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300. Original PDF
    badge MMDT3906
    CREATEK Microelectronics PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge MMBT3906
    AK Semiconductor MMBT3906 is a PNP transistor in SOT-23 package with -40V collector-emitter voltage, -0.2A continuous collector current, 100-300 DC current gain, and 0.2W power dissipation, suitable for general-purpose switching and amplification applications. Original PDF
    badge MMST3906
    Shenzhen Heketai Electronics Co Ltd PNP bipolar transistor in SOT-323 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain up to 300. Original PDF
    badge MMBT3906
    SLKOR PNP Switching Transistor, VCEO -40V, VCBO -40V, VEBO -6.0V, Ic -200mA, PD 225mW (FR-5), PD 300mW (Alumina), RΘJA 417°C/W, TJ 150°C. Original PDF
    badge MMST3906
    JCET Group PNP transistor in SOT-323 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain up to 300. Original PDF
    badge PXT3906
    Shenzhen Heketai Electronics Co Ltd PNP bipolar transistor in SOT-89 surface mount package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 500mW power dissipation, and DC current gain up to 300. Original PDF
    badge MMBT3906
    Shenzhen Heketai Electronics Co Ltd PNP bipolar transistor in SOT-23 surface mount package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge PZT3906
    Shenzhen Heketai Electronics Co Ltd PNP bipolar transistor in SOT-223 package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 1W power dissipation, and DC current gain up to 300, suitable for general purpose amplifier and switch applications. Original PDF
    badge MMBT3906
    Shikues Semiconductor Original PDF
    badge MMBT3906T
    Shikues Semiconductor Epitaxial Planar Die, Complementary NPN, Lead Free Version, MARKING:2A Original PDF
    badge MMBT3906T
    AK Semiconductor PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and hFE ranging from 60 to 300, suitable for general-purpose switching and amplification applications. Original PDF
    badge PZT3906
    JCET Group PNP transistor in SOT-223 package with -40V collector-emitter voltage, -200mA collector current, 1W power dissipation, and 250MHz transition frequency, suitable for general purpose amplifier and switch applications. Original PDF
    badge MMBT3906
    CREATEK Microelectronics PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge MMBT3906 2A(RANGE:100-300)
    JCET Group MMBT3906 is a PNP transistor in SOT-23 plastic package, with -40V collector-base and collector-emitter voltage ratings, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain ranging from 100 to 300. Original PDF
    badge PXT3906
    JCET Group PNP transistor in SOT-89-3L package with -40V collector-base and collector-emitter breakdown voltage, -0.2A continuous collector current, 0.5W power dissipation, and DC current gain up to 300. Original PDF
    badge MMBT3906
    Jiangsu JieJie Microelectronics Co Ltd MMBT3906 is a small signal PNP transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain up to 300. Original PDF
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    T3906 Price and Stock

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    onsemi MBT3906DW1T1G

    Bipolar Transistor Array, General Purpose, Dual PNP, 40 V, 200 mA - Tape and Reel (Alt: MBT3906DW1T1G)
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    onsemi MMBT3906TT1G

    Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 200 mW, SOT-416, Surface Mount - Tape and Reel (Alt: MMBT3906TT1G)
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    Avnet Americas MMBT3906TT1G Tape & Reel 951,000 51 Weeks 3,000
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    Newark () MMBT3906TT1G Tape & Reel 3,882 10
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    MMBT3906TT1G Cut Tape 3,882 1
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    MMBT3906TT1G Tape & Reel 2,190 100
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    MMBT3906TT1G Cut Tape 2,190 5
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    RS MMBT3906TT1G Bulk 200
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    Rochester Electronics MMBT3906TT1G 31,799 1
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    Avnet Asia MMBT3906TT1G 53 Weeks 90,000
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    Avnet Silica MMBT3906TT1G 225,000 45 Weeks 3,000
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    EBV Elektronik MMBT3906TT1G 36,000 46 Weeks 3,000
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    Maritex MMBT3906TT1G 6,224 5
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    Master Electronics MMBT3906TT1G 102,000
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    onsemi MMBT3906WT1G

    Bipolar (BJT) Single Transistor, General Purpose, PNP, 40 V, 200 mA, 150 mW, SOT-323, Surface Mount - Tape and Reel (Alt: MMBT3906WT1G)
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    Avnet Americas MMBT3906WT1G Tape & Reel 615,000 53 Weeks 3,000
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    Diodes Incorporated MMBT3906-7-F

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