DS30036 Search Results

Infrared phototransistor TO18

Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 QSD724 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM

QSD733

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

Infrared Phototransistor

Abstract: phototransistor support QSE122
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.030 (0.76) 0.100 (2.54) 0.100 (2.54)

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSE133 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER SCHEMATIC 0.020 (0.51) SQ. (2X) COLLECTOR 0.030 (0.76) 0.100 (2.54) 0.100 (2.54)

K1N TRANSISTOR

Abstract: MMBT3904 k1n marking code sot23 marking C1N MMBT3904 40V SOT23 marking K1N K1N diodes MMBT3904 c1n
Contextual Info: MMBT3904 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

DAP diagram

Abstract: smps 3.3v 5v TJ5A LP38502-ADJ 980600 LP38500ATJ-ADJ LP38500TJ-ADJ LP38500TS-ADJ AN1520 LP38502TS-ADJ
Contextual Info: ご注意：この日本語データシートは参考資料として提供しており内容が最新でない 場合があります。製品のご検討およびご採用に際しては、必ず最新の英文デー タシートをご確認ください。

K1N TRANSISTOR

Abstract: K1N SOT23 MMBT3904 K1N MMBT3904 MMBT3904-7-F transistor k1n
Contextual Info: SPICE MODEL: MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Epitaxial Planar Die Construction · · Ideal for Medium Power Amplification and Switching · · · · · · · A C Available in Lead Free/RoHS Compliant Version Note 2

Contextual Info: MMBT3904 Lead-free NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Epitaxial Planar Die Construction · · · Ideal for Medium Power Amplification and Switching SOT-23 Complementary PNP Type Available MMBT3906 Dim Min Max A 0.37 0.51 B 1.20 1.40

K1N TRANSISTOR

Abstract: R1A SURFACE MOUNT TRANSISTOR MMBT3904 MMBT3906 transistor sot23 1am
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D

Contextual Info: MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •         Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

K1N TRANSISTOR

Abstract: mmbt3904 complementary K1n td complementary mmbt3904 MMBT3904-7 MMBT3904-7-F k1n ic marking k1n marking code mmbt3904 J-STD-020A
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT3904 Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

1am3

Abstract: transistor 1am3 sot-23 marking 1AM3 k1n sot-23 marking
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim Min Max A 0.37 0.51 B 1.19

Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim A Min Max 0.37 0.51 B 1.19

QSD733

Abstract: "Infrared photodarlington" Photodarlington QED523
Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

K1N TRANSISTOR

Contextual Info: SPICE MODEL: MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Epitaxial Planar Die Construction · · Ideal for Medium Power Amplification and Switching · · · · · · · A C Available in Lead Free/RoHS Compliant Version Note 2

K1N TRANSISTOR

Abstract: K1N SOT23
Contextual Info: SPICE MODEL: MMBT3904 MMBT3904 Lead-free NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Epitaxial Planar Die Construction · · · Ideal for Medium Power Amplification and Switching SOT-23 Complementary PNP Type Available MMBT3906 Dim Min Max A

BT3904

Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T3906 Ideal for Medium Power Amplification and Switching SOT-23 -H : h~A TO P VIEW Mechanical Data_ • •

1aM x sot-23 transistor

Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim A Min Max 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89

QSD733

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

K1N TRANSISTOR

Abstract: k1n ic marking MMBT3904 marking code k1n K1n td complementary mmbt3904 K1N Code sot-23 on semiconductor k1n marking code K1N y MMBT3904-7
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 A C B Mechanical Data · · · · · · · · Maximum Ratings

QSD123/QSD124

Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES:

Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 QSD724 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM

QEE113

Abstract: QSE113 QSE114
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 PACKAGE DIMENSIONS 0.175 4.44 0.087 (2.22) Ø0.065 (1.65) 0.050 (1.27) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN COLLECTOR EMITTER SCHEMATIC 0.020 (0.51) SQ. (2X) Collector 0.030 (0.76) 0.100 (2.54)

K1N TRANSISTOR

Abstract: transistor k1n marking K1N K1N SOT23 K1n td k1n marking code
Contextual Info: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 A · · · · Min Max A 0.37 0.51 B 1.19 1.40 C 2.10