QSD733 Search Results

QSD733

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 PACKAGE DIMENSIONS DESCRIPTION The QSD733 is a silicon photodarlington encapsulated in an infrared transparent, black TO-18 package. U - .190 4.83 ^1 .178(4.62) V .235 (5.97) .218(5.54) T 0.030(0.76) NOM

QSD733

Abstract: "Infrared photodarlington" Photodarlington QED523
Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

QSD733

Contextual Info: PLASTIC SILICON INFRARED PHOTODARLINGTON QSD733 PACKAGE DIMENSIONS 0.190 4.83 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM SCHEMATIC 0.215 (5.46) NOM 0.020 (0.51)

Contextual Info: EQ PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 PACKAGE DIMENSIONS DESCRIPTION The Q S D 733 is a silicon photodarlington encapsulated in an infrared transparent, black TO -18 package. FEATURES Steel lead fram es for im proved reliability in solder

QED523

Abstract: QSD733
Contextual Info: r A\ j L£ll PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 PACKAGE DIMENSIONS DESCRIPTION The QSD733 is a silicon photodarlington encapsulated in an infrared transparent, black TO-18 package. FEATURES • Steel lead frames for improved reliability in solder

Contextual Info: [sö PLASTIC SILICON PHOTODARLINGTON OPTOELECTRONICS QSD733 Th e Q S D 733 is a silicon photodarlington en capsulated in an infrared transparent, black T O -18 package. R E FER ENC E SURFACE FEA TU RES V .235 5.97 .218(5.54) OR A N G E STR IPE Steel lead fram es for im proved reliability in solder

sc114

Contextual Info: [sO OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS FUì r . e s31><>r ' T-1 3 mm P»li SMin il b «i t 3V Í SÍI OI !- 1, ït e n s il i V it y if ii n i i ! ; Si u r p. í :• /n ;i m a* í Not ú » Phototransistor .76 NOM I .052 (1.32) .032 (.082)

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

MAN6760 function

Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Contextual Info: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

Contextual Info: Plastic Silicon Photosensors TO-18 Detector Plastic Package 0.190 (4.83) 0.178 (4.52) 45° REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER COLLECTOR 0.050 (1.27) 0.100 (2.54) NOM 0.215 (5.46) NOM 0.020 (0.51) SQ 2PLCS Part

irf 3502

Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
Contextual Info: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page

Contextual Info: OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS T-1 3 mm P a rt N um ber J b v ceo ’c |ON| m in m a x u n its V m in ^Eo /V ce (nA)/(V) m ax N o te s P h o t o t r a n s is t o r NOM : „ 32, R e c e p t io n A n g le @ 1/2 P o w e r T QSC112 ±8°

phototransistor 600 nm

Abstract: lens photodiode phototransistor Phototransistor to-18 QSD124 Phototransistor QSE773 QSC112 phototransistor application circuit photo-transistor QSC114
Contextual Info: Optoelectronics Plastic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type T-1 (3 mm) Detector Package QSC112 5 0.5 880 AlGaAs 1.00 4.00 30 100 Phototransistor

QSD123/QSD124

Contextual Info: OPTOELECTRONICS T-1 3 mm PLASTIC SILICON INFRARED PHOTOSENSORS .116 2.95 f REFERENCE N 193 (4.90) I' \ 030 (.76) NOM 1 I \ \ 052 Q.32) .032 (.082) I" P a rt N u m b er R ec ep tio n A n gle @ 1/2 S e n s itiv ity •c(ON) min m ax units B V ceo (V) min •cEO/ V CE

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22

TRANSISTOR D 880

Abstract: H21A1 photodiode TRansistor A 940 k 30 transistor l14f1 photodiode 022 020 transistor transistor l14f1 optologic 0118 transistor L14G2 transistor
Contextual Info: Fairchild Semiconductor Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes, Switches, and Sensors Infrared Emitting Diodes continued Mfr.Õs Type Fig. Power Out Min. VF Max. Peak Emission Wavelength (nm) Beam Angle 1/2 Angle (¡) F5F1