MMBT3904M
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JCET Group
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NPN transistor in SOT-723 package with 40 V collector-emitter voltage, 0.2 A continuous collector current, 300 MHz transition frequency, and DC current gain up to 300. |
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MMBT3904T
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Shikues Semiconductor
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Complementary to MMBT3906T, Small Package, MARKING:MA |
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MMBT3904
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Microdiode Semiconductor
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SOT-23, NPN transistor, BASE, EMITTER, COLLECTOR. |
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MMBT3904T
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JCET Group
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MMBT39 NPN transistor in SOT-523 package features 40 V collector-emitter voltage, 200 mA collector current, 150 mW power dissipation, and DC current gain up to 300 with transition frequency of 300 MHz. |
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MMST3904
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JCET Group
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NPN transistor in SOT-323 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and 300MHz transition frequency. |
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PXT3904(RANGE:100-300)
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JCET Group
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NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 0.2A continuous collector current, 0.5W power dissipation, and transition frequency of 300MHz, suitable for low current and low voltage applications. |
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MMDT3904V
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JCET Group
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Dual NPN transistor in SOT-563 package, with 60 V collector-base voltage, 40 V collector-emitter voltage, 0.2 A continuous collector current, and 300 MHz transition frequency, suitable for low power amplification and switching applications. |
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MMBT3904
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AK Semiconductor
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NPN transistor in SOT-23 package, with 60 V collector-base breakdown voltage, 40 V collector-emitter breakdown voltage, 0.2 A collector current, and DC current gain up to 400. |
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MMBT3904W
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Shikues Semiconductor
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Silicon Epitaxial Planar Transistor for switching and amplifier applications |
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MMDT3904
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JCET Group
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NPN+NPN dual transistor in SOT-363 package with 40V collector-emitter voltage, 0.2A continuous collector current, 0.2W power dissipation, and DC current gain up to 300, designed for low power amplification and switching applications. |
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MMBT3904T
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AK Semiconductor
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MMBT3904T SOT-523 is an NPN transistor in a small surface-mount package, with 60 V collector-base voltage, 40 V collector-emitter voltage, 200 mA continuous collector current, and 150 mW power dissipation. |
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MMBT3904
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 surface mount package, with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT3904W
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AK Semiconductor
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MMBT3904W is an NPN transistor in SOT-323 package with 40V collector-emitter voltage, 200mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMBT3904T
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CREATEK Microelectronics
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NPN small signal transistor in SOT-523 package with 40 V VCEO, 200 mA IC, 150 mW PC, and DC current gain (hFE) from 100 to 300, suitable for surface mount applications. |
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MMBT3904
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SLKOR
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NPN Switching Transistor, VCEO 40Vdc, VCBO 60Vdc, VEBO 6.0Vdc, Ic 200mAdc, PD 225mW, PD 300mW, RΘJA 417°C/W, T/t 260/10°C/S, TJ, Tstg -55 to +150°C. |
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MMBT3904
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CREATEK Microelectronics
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NPN small signal transistor in SOT-23 package with 40 V collector-emitter voltage, 200 mA collector current, 200 mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT3904M
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Shikues Semiconductor
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200mW, 200mA, -55°C to 150°C, SMT, RoHS, Green EMC |
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MMBT3904K
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Shikues Semiconductor
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SOT-23 Plastic-Encapsulate Transistors, 200mW, High Stability, High Reliability, Epoxy UL: 94V-0, Any Mounting Position. |
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MMBT3904(RANGE:100-300)
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JCET Group
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MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT3904M
