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SI6967DQ Datasheets (7)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si6967DQ		Unknown	Metal oxide P-channel FET, Enhancement Type	Original	PDF	51.28KB	4
Si6967DQ		Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
Si6967DQ		Vishay Intertechnology	Dual P-Channel 1.8-V (G-S) MOSFET	Original	PDF	31.21KB	3
Si6967DQ SPICE Device Model		Vishay	Dual P-Channel 1.8-V (G-S) MOSFET	Original	PDF	218.71KB	3
SI6967DQ-T1		Vishay Intertechnology	Dual P-Channel 1.8-V (G-S) MOSFET	Original	PDF	31.21KB	3
SI6967DQ-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 8TSSOP	Original	PDF		10
SI6967DQ-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 8V 8TSSOP	Original	PDF		10

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Vishay Siliconix SI6967DQ-T1 Trans MOSFET P-CH Si 8V 5A 8-Pin TSSOP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI6967DQ-T1		12,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI6967DQ-T1		9,600			1 $3.94 10 $3.94 100 $3.94 1000 $3.94 10000 $1.38	Buy Now
Others SI6967DQT1 INSTOCK
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Chip 1 Exchange	SI6967DQT1		8,163			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI6967DQ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si6967DQ Contextual Info: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si6967dq 16-apr-01	PDF
SI6967DQ Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	si6967dq si6967dq-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: SI6967DQ VISHAY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.030 @ VGS = —4.5 V ±5 .0 0.045 @ VGS = -2 .5 V ±4 .0 0.070 @ VGS = -1 .8 V ±3 .0 I* ' v* Si s2 o 9 TSSOP-8 d2 Di Si s2	OCR Scan	si6967dq s-59525 12-oct-98	PDF
SI6967DQ Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	si6967dq si6967dq-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Si6967DQ Contextual Info: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si6967dq s-60147rev 13-feb-06	PDF
SI6967DQ Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.030 @ VGS = –4.5 V "5.0 0.045 @ VGS = –2.5 V "4.0 0.070 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6967DQ	Original	si6967dq s-59525--rev 12-oct-98	PDF
Si6967DQ Contextual Info: SPICE Device Model Si6967DQ Dual P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	si6967dq	PDF
SI6967DQ Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.030 @ VGS = –4.5 V "5.0 0.045 @ VGS = –2.5 V "4.0 0.070 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6967DQ	Original	si6967dq 08-apr-05	PDF
Si6967DQ Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.030 @ VGS = –4.5 V "5.0 0.045 @ VGS = –2.5 V "4.0 0.070 @ VGS = –1.8 V "3.0 S1 S2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6967DQ	Original	si6967dq s-59525--rev 12-oct-98	PDF
74842 Abstract: 2197 4099 9120 A AN609 Si6967DQ Contextual Info: Si6967DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si6967dq an609 10-jul-07 74842 +32197 4099 9120 a	PDF
Si6967DQ Contextual Info: Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V ± 5.0 0.045 at VGS = - 2.5 V ± 4.0 0.070 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated	Original	si6967dq si6967dq-t1-ge3 18-jul-08	PDF
Si6967DQ Contextual Info: SPICE Device Model Si6967DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si6967dq 18-jul-08	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	si4831dy si4833dy si4852dy si4816dy +1410single vn50300l vn50300t ot-23 vn66afd vn10kls mosfet bs250 si4730 sup85n03-04p si4835dy si5504 si3459dv sup65p06 sub75p05	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2n7000 2n7002 2sj377 2sj378 +162sj380 2sj401 2sj402 2sj407 2sj412 2sj419 yta630 mtw14p20 bss125 mtaj30n06hd 2sk2837 equivalent smu10p05 smp60n06 replacement ste180n10 rfh75n05e irfd620	PDF

si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	si6463bdq si6459bdq-t1-ge3 si5944du-t1-e3 si5944du-t1-ge3 +15si5945du-t1-e3 si5945du-t1-ge3 si5947du-t1-e3 si5947du-t1-ge3 ppaksc75 si5480 sia913dj-t1-ge3 sia513dj-t1-e3 si6404dq-t1 sia411dj-t1-e3 sib414dk-t1-e3 si6913dq-t1-e3 sia513dj-t1-ge3 si6925adq-t1-e3 si6981dq-t1-ge3	PDF