RFH75N05 Search Results

Contextual Info: 43D2E71 3 3 H A R O0544Û0 R 454 • HAS RFH75N05E IS Ja n u ary 1993 N -C h a n n e l E n h an cem en t-M o d e P ow er F ie ld -E ffe c t Transistors M egaFETs Package Features T O -2 1 8 • 75A , 50V T O P VIEW • rDS(on) = 0 .0 0 8 ÎI SOURCE D R A IN

RFH75N05E

Abstract: 75N05 75N05E RFH75N rfg75
Contextual Info: 2 3 H a r r i RFG75N05E RFH75N05E s N -Channel Enhancem ent-M ode Power Field-Effect Transistors MegaFETs J a n u a ry 1 9 9 3 Features Package T O -2 1 8 • 75A , 50V T O P VIEW • rDS(on) = 0 .0 0 8 fî »SO U RCE D R A IN • Electrostatic Discharge Rated

RFH75N05, RFA100N05

Abstract: RFH75N05 RFA100N05 AN-7260 an7254 AN7260 rca application notes ISD 100 h75n05cf5
Contextual Info: Preview Products RFH75N05, RFA100N05 File Number 2275 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 75 A and 100 A, 50 V N -CH A N N EL E N H A N C E M EN T MODE fosfori) = 0 .0 1 0 O Features: • Single pulse avalanche energy rated

Spice 2 computer models for hexfets

Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power

Spice 2 computer models for hexfets

Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model RFH75N05 Malouyans AN75 AN1043 Spice Model for TMOS Power MOSFETs SM30
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract /Title AN75 0 Subect A ew spice ubciruit or he ower OSET eaturng lobal emeraure ption ) Autho () Keyords Interil orpoation, emionuctor accepted by users, and the ease of parameter extraction

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

pspice high frequency mosfet

Abstract: Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs ERL 35 transformer RFH75N05 RFH75N05 datasheet Sharp SM30 NMOS depletion pspice model n mosfet depletion pspice model parameters SM30
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract Title N92 bt A w pice bcirt r e wer OST atur- accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

n mosfet depletion pspice model parameters

Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
Contextual Info: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant

Sharp amplifier SM30

Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power

RHR30120

Abstract: RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055
Contextual Info: • P art N u m b e r M fr Qty/Note 7600345 P a rt N u m b e r □ □□□37 6 M fr -no Qty/Note ■ P a rt N u m b e r M fr Qty/Nol RC1466 REI CALL RC6S5TL/R REI 179 REF03GP RC1469 ANA 167 REI CALL RC668L REI 158 REF03GS RC1472U ANA 71 REI 390 RC78T12ACK UT

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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