SI6473DQ Search Results

Contextual Info: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

Contextual Info: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

Si6473DQ

Abstract: 01-042 71164
Contextual Info: Si6473DQ New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0125 @ VGS = –4.5 V –9.5 0.016 @ VGS = –2.5 V –8.5 0.0215 @ VGS = –1.8 V –7.3 –20 20 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6473DQ

Si6473DQ

Contextual Info: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

A 7607

Abstract: AN609 Si6473DQ
Contextual Info: Si6473DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

Contextual Info: Si6473DQ New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0125 @ VGS = –4.5 V –9.5 0.016 @ VGS = –2.5 V –8.5 0.0215 @ VGS = –1.8 V –7.3 –20 20 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6473DQ

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

smd diode code PJ 1466

Abstract: IC 741 OPAMP DATASHEET a in4 733 SMD SOT23 transistor MARK 1e Diode smd code PJ 1466 datasheet opamp 741 pj 2309 smd diode irlm2502 semiconductors cross index ACS750
Contextual Info: ispPAC Power Manager II Family Handbook HB1007 Version 01.3, November 2009 ispPAC Power Manager II Family Handbook Table of Contents November 2009 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 . 1-1

smd Pj 2479

Abstract: pj 2309 diode pj 2309 smd diode smd zener diode color code ISPPACPOWER1208 cny17 03 FDS6679 "pin-compatible" Cross Reference sot23 HB1007 SMD PJ 3236
Contextual Info: ispPAC Power Manager II Family Handbook HB1007 Version 01.1, June 2008 ispPAC Power Manager II Family Handbook Table of Contents June 2008 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 Data Sheet . 1-1

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

irlm2502

Abstract: how mosfets connect parallel IRF3716 FDS6679 MBT50P03HDL an6048 Si2314EDS IRF7410 FDS6064N3 POWR1208
Contextual Info: Using Power MOSFETs with Power Manager Devices April 2008 Application Note AN6048 Introduction Power MOSFETs are increasingly being used to switch local power supplies on PCB assemblies. The Lattice ispPAC -POWR1208 can be used in several ways to provide intelligent control of these devices for power supply