SSP1N60A Search Results
SSP1N60A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSP1N60A | Fairchild Semiconductor | Advanced Power MOSFET | Original | 253.92KB | 7 | ||
| SSP1N60A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSP1N60A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 167.63KB | 6 |
SSP1N60A Price and Stock
FAIRCHILD SSP1N60ASSP1N60A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP1N60A | 3,893 | 2,738 |
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Buy Now | ||||||
Fairchild Semiconductor Corporation SSP1N60AMOSFET N-Channel 600V 1A (Tc) TO-220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP1N60A | 3,893 | 1 |
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Buy Now | ||||||
Samsung Electronics Co. Ltd SSP1N60AIN STOCK SHIP TODAY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP1N60A | 990 |
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Buy Now | |||||||
SSP1N60A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V |
OCR Scan |
ssp1n60a003b32flo-22000m1n+2 | |
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Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax @ VOS= 600V 600 V BVdss |
OCR Scan |
ssp1n60a | |
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Contextual Info: Advanced SSP1N60A Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 600 V ^ D S o n = 12 a lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V |
OCR Scan |
ssp1n60a | |
SSP1N60AContextual Info: Advanced SSP1N60A P o w e r MOSFET FEATURES DSS = 600 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 1 A ■ E xtended S afe O pe ra ting A rea |
OCR Scan |
ssp1n60ao-220 | |
SSP1N60AContextual Info: SSP1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 600V |
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ssp1n60ao-220 | |
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Contextual Info: SSP1N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVpss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA M ax @ VM = 600V |
OCR Scan |
ssp1n60ao-220 | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
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device2176r14153cr108/dirf9310+9 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
FQP630
Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
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o-220isl9n302ap3fdp8030lisl9n303ap3+15 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
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irf830airf830bpower247tmsss4n60a+9 | |
1RFS640A
Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
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OCR Scan |
t0-2201rfz14airfz24airfz34a+13 | |
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
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Contextual Info: SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to |
Original |
ssr1n60bssu1n60bssp1n60assr1n60btm+2 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |