sdt12303
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 60 70 80 7.0 8.0 8 8.0 8.0 10 10 10 10 10 ~eneral:seml SDT7809 SDT7809 SDT7809 BUX17B BUX17B SDT14204 SDT14304 SDT14304 XGSR10030 Solltron PPC Product Sid St Dvcs GE Solid St NthAmerSemi
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2n6575ptc6674p2n69312n6250+6rjh66742n18142n2114sdt13301sdt13201sdt12303
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SDT96309
Abstract: sdt96
Contextual Info: -j/otttron_^ Eom gir ©at&ìl©© S W IT C H T R O N P O W E R T R A N S IS T O R S Devices. Inc DEVICE POLARITY TYPE v C EO su s 'C ( P .i k ) hpj; & 'c VC E (sat) ifM H j PT (W ) V O LTS AM PS MIN/MAX AM PS M AX. A M PS MIN. MAX 30
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2n65462n65472n65602n6561+8sdt02353sdt02354sdt02355sdt12301sdt12302sdt12303sdt96309sdt96
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JAN2N3846
Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
Contextual Info: jg m m ^alîtran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER FORMERLY 14 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mmjan2n3846jan2n3847sdt14304+4sdt14305sdt14414npn transistor 10a 400v to3npn power 20a 200v
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solitrondevices
Abstract: Solitron transistor c47
Contextual Info: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum
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000s037305mmsolitrondevicessolitron+1transistor c47
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2NS604
Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75
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2n23872n29882n2s892n2990+162n29912n29922n29932n29942n34392n34402ns6042ns5402ns154sd716sdt133052n56712n5005sdt425sdt7605sdt96302
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BDY96
Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40
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bu131bdy97sdt7909bu107+7xgsr7530sdt7809bdy96dts51960m62n2114ir519
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SDT96309
Abstract: SDT13305 SDT12303 SDT12302 2n6561 SDT13301 SDT13302 SDT13303 2N6546 2N6547
Contextual Info: V PT @ 1C CE @ IC 1TMHz Polarity sus (Peak) MIN/ (sat) (W) VOLTS AMPS MAX AMPS MAX AMPS MIN. MAX. 10/ 2N6546 * NPN 300 30 5.0 1.50 10.0 6.0 175 60 12/ 2N6547 * NPN 400 30 5.0 1.50 10.0 6.0 175 60 10/ 2N6560 NPN 450 15 5.0 0.75 5.0 10.0 220 40 10/ 2N6561
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2n65462n65472n65602n6561+11sdt02353sdt02354sdt02355sdt12301sdt12302sdt12303sdt96309sdt13305sdt13301sdt13302sdt13303
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2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
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2n26572n26582n2877o-111+132n28782n28792n28802n52862n5290solitron2n5740sdt13305sdt3775sdt855022n439s2n56102n6562
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sdt14304
Abstract: 041m 200V transistor npn 20a
Contextual Info: -Jfotttran PlËM (yj(§¥ Ä1TM,©( Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 14) c^lcrfl CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm12mhz600pfsdt14304+2041m200v transistor npn 20a
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TO114
Contextual Info: SOLITRON DEVICES "is INC de -ÆsiZran I ö3bßboa pmmw&ï ä t t ä l © Devices. Inc. SWITCHTROIM POW ER TRANSISTORS v CEO(sus VOLTS •C(Peak) AMPS hpE @ •c MIN/MAX AMPS NPN NPN NPN NPN PNP 300 400 450 300 -300 30 30 15 20 -15 10/60 12/60 10/40 10/50
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sdt02354sdt02355sdt12301sdt12302+7sdt12303sdt13301sdt13302sdt13303sdt13304sdt13305to114
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SDT13305
Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251
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2n28112n28122n28132n2814+112n40702n40712n43012n50062n50082n5218sdt13305sdt12302sdt13303sdt7603sdt7732
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2N2611
Abstract: 2N8674 2N5675 2N2812 2N2813 2N4070 2N4071 2N4301 2N5218 2N5313
Contextual Info: SûUARE î> C O / GENERAL “ ^ 3 9 1 8 5 9 0 G EN E R A L SE M IC O N D U C T O R _ ' $ ÖS2SS0Ö 95D 02094 D T -J 3 -// le = 10 A M P S / ‘ BVceo PACKAGE VOLTS «CEV VOLTS b v eb0 2N2611 TO-61 60 2N2812 TO-61 60 2N2813
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33-/j2n86742n66752n6689+152n8890gsdb10008tgsdu7530gsdu7535g8du7540gstu80352n26112n56752n28122n28132n40702n40712n43012n52182n5313
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