XGSR10030 Search Results

sdt12303

Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 60 70 80 7.0 8.0 8 8.0 8.0 10 10 10 10 10 ~eneral:seml SDT7809 SDT7809 SDT7809 BUX17B BUX17B SDT14204 SDT14304 SDT14304 XGSR10030 Solltron PPC Product Sid St Dvcs GE Solid St NthAmerSemi

Contextual Info: General 2 ^ Semiconductor ^ Industries, Inc. 10 A m p N P N 300, 350, 40 0 V X G S R 1 0 03 0 . 35. 40 X G S R 1 0 0 3 0 -I. 35-I. 40-I C2R® HIGH SPEED/HIGH POWER SWITCHING TRANSISTORS The XGSR series is an NPN double diffused epitaxial transistor designed for high speed switching

BDY96

Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40

t03 package transistor pin configuration

Abstract: 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I
Contextual Info: SÛUARE » CO/ GENERAL -A f hD D • fiSEISSÜfl 0001057 60C 01857 GENERAL SEMICONDUCTOR INDUSTRIES, INC. 1 1 I b ■ D N PN Isolated Collector TO-3 ISOLATED COLLECTOR HIGH SPEED, HIGH POWER SWITCHING TRANSISTOR The isolated collector package configuration has been designed for use In switching applications

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0