NE71383B Search Results

SIA 6822

Contextual Info: L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz m 2, < CD HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz GATE WIDTH: Wg = 280

sg 6822

Abstract: ne71383B sg 8841 ku-band oscillator D 1307
Contextual Info: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ a tf = 12 GHz m • HIGH ASSOCIATED GAIN: < 5 14 dB typ at f = 4 GHz ro • GATE WIDTH: Wg = 280 jim

Contextual Info: NONLINEAR MODEL SCHEMATIC NE71383B CGD_PKG 0.001pF LD LD_PKG 0.28nH 0.26nH RD_PKG DRAIN RG_PKG GATE 1 ohm Q1 LG_PKG 0.32nH 0.4 ohms LG 0.14nH CCD_PKG 0.1pF LS_PKG 0.04nH CCG_PKG 0.1pF RS_PKG 0.02 ohms CSG_PKG CSD_PKG 0.01pF 0.01pF SOURCE FET NONLINEAR MODEL PARAMETERS 1

L to Ku Band Low Noise GaAs MESFET

Abstract: NE71383B NE71383
Contextual Info: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm

z 0607

Contextual Info: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: Wg = 280 \im

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B NE71383
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

NE24283B

Abstract: NE76083A ne71383B
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 83A/B 1.88 ± 0.3 S Dot A 0.5 ± 0.1 1.88 ± 0.3 G D 4.0 MIN ALL LEADS Dot B S 1.0 ± 0.1 1.45 MAX +0.07 0.1 -0.03 PART NUMBER MARKING

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of