UPC277 Search Results

UPC2771T

Abstract: UPC2771TB UPC2771TB-E3-A
Contextual Info: 3V, SUPER MINIMOLD UPC2771TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE 24 • HIGH GAIN: 21 dB at 900 to 1500 MHz Typical TA = -40˚ C • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • SUPER SMALL PACKAGE: SOT-363

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION ¿¡PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.

Contextual Info: PRELIMINARY DATA SHEET 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T TEST CIRCUIT FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POW ER: PidB = +12 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum

UPC2771T

Abstract: UPC2771T-E3
Contextual Info: 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2771T GAIN vs. FREQUENCY AND TEMPERATURE • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical 24 • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz 22 • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2771 TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS D ESC R IPTIO N The ,uPC2762TB, ,uPC2763TB and ,uPC2771TB are silicon monolithic integrated circuits designed as amplifier for

Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD UPC2776TB SILICON MMIC WIDEBAND AMPLIFIER FEATURES_ • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: PidB: 6.0 dBm at 1.0 GHz

Contextual Info: 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POWER: PidB = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum m • SUPER SMALL PACKAGE

208 SOT-363

Abstract: 772 T 23 nec 772 transistor outline package 3 UPC2771TB-E3 ZL 15 a UPC2771T UPC2771TB
Contextual Info: 3V, SUPER MINIMOLD UPC2771TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE 24 • HIGH GAIN: 21 dB at 900 to 1500 MHz Typical TA = -40˚ C • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • SUPER SMALL PACKAGE: SOT-363

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER D E S C R IP T IO N /¿PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.

MMIC WIDE-BAND AMPLIFIER sot-363

Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD UPC2776TB SILICON MMIC WIDEBAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB 25 • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz • 5 V SINGLE SUPPLY VOLTAGE

Contextual Info: 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T FEATURES • H IG H G A IN : 20 dB at 900 to 1500 MHz Typical • H IG H O U T P U T P O W E R : PidB = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • L O W B IA S V O L T A G E : 3.0 V Typical, 2.7 V Minimum

transistor t06

Abstract: t06 TRANSISTOR UPC2776 UPC2776T UPC2776T-E3
Contextual Info: PRELIMINARY DATA SHEET 2.7 GHz SILICON MIMIC WIDE BAND AMPLIFIER UPC2776T FEATURES GAIN vs. FREQUENCY WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm @ 1.0 GHz • 5 V SINGLE SUPPLY VOLTAGE

Contextual Info: 3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER UPC2771TB FEATURES • HIGH GAIN: 21 dB at 900 to 1500 M Hz Typical • HIGH O U TPU T POW ER: P s a t = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VO LTAG E: 3.0 V Typical, 2.7 V Minimum m •o

UPC2771T

Abstract: UPC2771T-E3 PFL6
Contextual Info: 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2771T GAIN vs. FREQUENCY AND TEMPERATURE • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical 24 • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz 22 • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ESC R IPTIO N The ¿iPC2776TB is a silicon monolithic integrated circuits designed as w ideband amplifier. impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band.

Contextual Info: 3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2771TB GAIN vs. FREQUENCY AND TEMPERATURE 24 • HIGH GAIN: 21 dB at 900 to 1500 MHz Typical TA = -40˚ C • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • SUPER SMALL PACKAGE: SOT-363

Contextual Info: 3V, SUPER MINIMOLD UPC2771TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES GAIN vs. FREQUENCY AND TEMPERATURE 24 • HIGH GAIN: 21 dB at 900 to 1500 MHz Typical TA = -40˚ C • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz • SUPER SMALL PACKAGE: SOT-363

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776TB 5 V, SUPER MINIMOLD SILICON RFIC WIDEBAND AMPLIFIER FEATURES GAIN vs. FREQUENCY 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz

Analog devices marking Information

Abstract: UPC2776TB-E3 sot-363 marking 576 amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1.5 GHZ transistor amplifier 2.5 ghz 18 marking RF power amplifier all ic datasheet in one pdf file TRANSISTOR 80 GHZ DATA SHEET OF IC 715
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776TB 5 V, SUPER MINIMOLD SILICON RFIC WIDEBAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

uPC277

Abstract: MPC277 iC C393 C277G
Contextual Info: HPC277 / 393 L o w P o w e r D u a l C o m p a ra to rs G E N E R A L DESCRIPTION FEATURES The /¿PC277/393 are dusl comparators w h ich ere Input Com m on-M ode V oltage Range Includes designed to operate from a single pcwe: supply over a w id e range o f voltage. Operation from s p lit power sup*

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
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